Containing the catalysts: diameter controlled Ge nanowire growth

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dc.contributor.authorLotty, Olan
dc.contributor.authorBiswas, Subhajit
dc.contributor.authorGhoshal, Tandra
dc.contributor.authorGlynn, Colm
dc.contributor.authorO'Dwyer, Colm
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorMorris, Michael A.
dc.contributor.authorHolmes, Justin D.
dc.contributor.funderHigher Education Authorityen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderEuropean Commissionen
dc.date.accessioned2016-02-10T17:22:20Z
dc.date.available2016-02-10T17:22:20Z
dc.date.issued2013-07-11
dc.date.updated2013-08-20T17:04:34Z
dc.description.abstractSub-20 nm diameter Ge nanowires with narrow size distributions were grown from Ag nanoparticle seeds in a supercritical fluid (SCF) growth process. The mean Ge nanowire diameter and size distribution was shown to be dependent upon Ag nanoparticle coalescence, using both spin-coating and a block copolymer (BCP) templating method for particle deposition. The introduction of a metal assisted etching (MAE) processing step in order to "sink" the Ag seeds into the growth substrate, prior to nanowire growth, was shown to dramatically decrease the mean nanowire diameter from 27.7 to 14.4 nm and to narrow the diameter distributions from 22.2 to 6.8 nm. Hence, our BCP-MAE approach is a viable route for controlling the diameters of semiconductor nanowires whilst also ensuring a narrow size distribution. The MAE step in the process was found to have no detrimental effect on the length or crystalline quality of the Ge nanowires synthesised.en
dc.description.sponsorshipEuropean Commission (EU 7th Framework Programme under the SiNAPS project (Grant: 257856)); Science Foundation Ireland (Grant: 09/IN.1/I2602); Higher Education Authority (Program for Research in Third Level Institutions (2007–2011) via the INSPIRE programme)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationLOTTY, O., BISWAS, S., GHOSHAL, T., GLYNN, C., O' DWYER, C., PETKOV, N., MORRIS, M. A. & HOLMES, J. D. 2013. Containing the catalyst: diameter controlled Ge nanowire growth. Journal of Materials Chemistry C, 1, 4450-4456. http://dx.doi.org/10.1039/C3TC30846Den
dc.identifier.doi10.1039/C3TC30846D
dc.identifier.endpage4456en
dc.identifier.issn2050-7526
dc.identifier.issued29en
dc.identifier.journaltitleJournal of Materials Chemistry Cen
dc.identifier.startpage4450en
dc.identifier.urihttps://hdl.handle.net/10468/2275
dc.identifier.volume1en
dc.language.isoenen
dc.publisherRoyal Society of Chemistryen
dc.relation.urihttp://pubs.rsc.org/en/content/articlepdf/2013/tc/c3tc30846d
dc.rights© Royal Society of Chemistry 2013.en
dc.subjectCrystalline qualityen
dc.subjectDiameter distributionsen
dc.subjectGrowth substratesen
dc.subjectMetal assisted etchingsen
dc.subjectNarrow size distributionsen
dc.subjectParticle depositionsen
dc.subjectSemiconductor nanowireen
dc.subjectTemplating methoden
dc.subjectCoalescenceen
dc.subjectEffluent treatmenten
dc.subjectGermaniumen
dc.subjectNanoparticlesen
dc.subjectNanowiresen
dc.subjectSize distributionen
dc.subjectSupercritical fluidsen
dc.subjectSilveren
dc.titleContaining the catalysts: diameter controlled Ge nanowire growthen
dc.typeArticle (peer-reviewed)en
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