Structural and optical properties of post-annealed atomic-layer-deposited HfO2 thin films on GaAs

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dc.contributor.authorBennett, N.S.
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorWong, C. S.
dc.contributor.authorO'Connor, Éamon
dc.contributor.authorMonaghan, Scott
dc.contributor.authorHurley, Paul K.
dc.contributor.authorChauhan, L.
dc.contributor.authorMcNally, P. J.
dc.contributor.funderEnterprise Irelanden
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHigher Education Authorityen
dc.date.accessioned2022-06-28T15:53:39Z
dc.date.available2022-06-28T15:53:39Z
dc.date.issued2014-08-29
dc.date.updated2022-06-27T11:13:23Z
dc.description.abstractThe effects of post-annealing conditions on solid-phase crystallization of atomic-layer-deposited HfO2 films grown on GaAs were investigated. Film properties, including crystallinity (preferential crystal orientation and crystallite size), thickness, density, permittivity, optical band gap and chemical composition were monitored as a function of annealing conditions. Following rapid thermal processing (RTP) in nitrogen ambient at temperatures from 325 °C to 625 °C, the initially produced amorphous/partially crystallized HfO2 films changed into a well-ordered crystalline structure with no detectable interfacial layer between the film and the GaAs substrate. Though HfO2 properties were predictable and similar to those of HfO2 on Si for low temperature processing, in the case of annealing at ≥ 475 °C, the thickness of the film was relatively increased compared to that of an as-grown film and displayed unexpected film characteristics. Changes after annealing in the depth profile data related to stoichiometry indicated that As oxide is formed within the HfO2 film during the RTP. The formation of As oxide in the HfO2 film, resulting from the underlying substrate, is dissimilar to previously published results which reported the presence of Ga oxide.en
dc.description.sponsorshipEnterprise Ireland ("ENGAGE": IR-2008-0006); Higher Education Authority (INSPIRE program)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationBennett, N. S., Cherkaoui, K., Wong, C. S., O'Connor, É., Monaghan, S., Hurley, P., Chauhan, L. and McNally, P. J. (2014) 'Structural and optical properties of post-annealed atomic-layer-deposited HfO2 thin films on GaAs', Thin Solid Films, 569, pp. 104-112. doi: 10.1016/j.tsf.2014.08.025en
dc.identifier.doi10.1016/j.tsf.2014.08.025en
dc.identifier.endpage112en
dc.identifier.issn0040-6090
dc.identifier.journaltitleThin Solid Filmsen
dc.identifier.startpage104en
dc.identifier.urihttps://hdl.handle.net/10468/13328
dc.identifier.volume569en
dc.language.isoenen
dc.publisherElsevier B.V.en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Strategic Research Cluster/08/SRC/I1411/IE/SRC PRECISION: Plasma Technology for Nano Manufacturing/en
dc.rights© 2014, Elsevier B.V. All rights reserved. This manuscript version is made available under the CC BY-NC-ND 4.0 license.en
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectHafniaen
dc.subjectGallium arsenideen
dc.subjectAtomic layer depositionen
dc.subjectDielectric propertiesen
dc.subjectHigh dielectric constant materialsen
dc.titleStructural and optical properties of post-annealed atomic-layer-deposited HfO2 thin films on GaAsen
dc.typeArticle (peer-reviewed)en
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