Electron and hole dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers

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dc.contributor.authorO'Driscoll, Ian
dc.contributor.authorPiwonski, Tomasz
dc.contributor.authorSchleussner, C.F.
dc.contributor.authorHoulihan, John
dc.contributor.authorHuyet, Guillaume
dc.contributor.authorManning, Robert J.
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderIrish Research Council for Science, Engineering and Technology
dc.contributor.funderHigher Education Authority
dc.contributor.funderSixth Framework Programme
dc.date.accessioned2017-07-28T13:20:06Z
dc.date.available2017-07-28T13:20:06Z
dc.date.issued2007
dc.description.abstractSingle-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs/GaAs quantum dot amplifiers. The study reveals that hole recovery and intradot electron relaxation occur on a picosecond time scale, while the electron capture time is on the order of 10 ps. A longer time scale of hundreds of picoseconds is associated with carrier recovery in the wetting layer, similar to that observed in quantum well semiconductor amplifiers. (c) 2007 American Institute of Physics. (DOI:10.1063/1.2771374)en
dc.description.sponsorshipScience Foundation Ireland (Contract Nos. 01/FI/CO13 and 03/IN.1/ 1340); European Commission (EU project TRIUMPH (IST-027638 STP)); Higher Education Authority (under the PRTLI program)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid71111
dc.identifier.citationO’Driscoll, I., Piwonski, T., Schleussner, C.-F., Houlihan, J., Huyet, G. and Manning, R. J. (2007) 'Electron and hole dynamics of InAs∕GaAs quantum dot semiconductor optical amplifiers', Applied Physics Letters, 91(7), pp. 071111. doi: 10.1063/1.2771374en
dc.identifier.doi10.1063/1.2771374
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued7
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4378
dc.identifier.volume91
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.2771374
dc.rights© 2007 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Driscoll, I., Piwonski, T., Schleussner, C.-F., Houlihan, J., Huyet, G. and Manning, R. J. (2007) 'Electron and hole dynamics of InAs∕GaAs quantum dot semiconductor optical amplifiers', Applied Physics Letters, 91(7), pp. 071111 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2798250en
dc.subjectQuantum dotsen
dc.subjectElectron captureen
dc.subjectIII-V semiconductorsen
dc.subjectSemiconductor optical amplifiersen
dc.subjectGround statesen
dc.titleElectron and hole dynamics of InAs/GaAs quantum dot semiconductor optical amplifiersen
dc.typeArticle (peer-reviewed)en
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