Electronic and excitonic properties of ultrathin (In,Ga)N layers: the role of alloy and monolayer width fluctuations

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dc.check.date2021-09-30
dc.check.infoAccess to this article is restricted until 12 months after publication by request of the publisher.en
dc.contributor.authorTanner, Daniel S. P.
dc.contributor.authorSchulz, Stefan
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderSustainable Energy Authority of Irelanden
dc.date.accessioned2021-01-20T11:06:24Z
dc.date.available2021-01-20T11:06:24Z
dc.date.issued2020-09-30
dc.date.updated2021-01-20T09:17:16Z
dc.description.abstractWe present an atomistic theoretical analysis of the electronic and excitonic properties of ultrathin, monolayer thick wurtzite (In,Ga)N embedded in GaN. Our microscopic investigation reveals that (i) alloy fluctuations within the monolayer lead to carrier localization effects that dominate the electronic and optical properties of these ultrathin systems and that (ii) excitonic binding energies in these structures exceed the thermal energy at room temperature, enabling excitonic effects to persist even at elevated temperatures. Our theoretical findings are consistent with, and provide an explanation for, literature experimental observations of (i) broad photoluminescence linewidth and (ii) excitonic effects contributing to the radiative recombination process at elevated temperatures. When accounting for small structural inhomogeneities, such as local thickness fluctuations of one monolayer, "indirect" excitons may be found, with electrons and holes independently localized in different spatial positions. This result also provides further arguments for experimentally observed effects such as (i) non-exponential decay curves in time dependent photoluminescence spectra and (ii) the "S"-shape temperature dependence of the photoluminescence peak energies. Overall, our results provide fundamental understanding, on an atomistic level, of the electronic and optical properties of ultrathin, quasi 2D (In,Ga)N monolayers embedded in GaN, and offer guidance for the tailoring of their properties for potential future device applications.en
dc.description.sponsorshipScience Foundation Ireland (Grant No. 17/CDA/4789; 12/RC/ 2276 P2)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationTanner, D. S. P. and Schulz, S. (2020) 'Electronic and excitonic properties of ultrathin (In,Ga)N layers: the role of alloy and monolayer width fluctuations', Nanoscale, 12, pp. 20258-20269. doi: 10.1039/d0nr03748fen
dc.identifier.doi10.1039/d0nr03748fen
dc.identifier.eissn2040-3372
dc.identifier.endpage20269en
dc.identifier.issn2040-3364
dc.identifier.journaltitleNanoscaleen
dc.identifier.startpage20258en
dc.identifier.urihttps://hdl.handle.net/10468/10936
dc.identifier.volume12en
dc.language.isoenen
dc.publisherRoyal Society of Chemistryen
dc.rights© 2020, the Authors. Publication rights licensed to the Royal Society of Chemistry. All rights reserved.en
dc.subject(In,Ga)N quantum wellsen
dc.subjectStrainen
dc.subjectGaNen
dc.subjectEmissionen
dc.subjectDotsen
dc.titleElectronic and excitonic properties of ultrathin (In,Ga)N layers: the role of alloy and monolayer width fluctuationsen
dc.typeArticle (peer-reviewed)en
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