Impact of second-order piezoelectricity on electronic and optical properties of c-plane InxGa12xN quantum dots: consequences for long wavelength emitters

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dc.contributor.authorPatra, Saroj K.
dc.contributor.authorSchulz, Stefan
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2018-04-09T16:45:42Z
dc.date.available2018-04-09T16:45:42Z
dc.date.issued2017-09-05
dc.date.updated2018-03-29T11:17:31Z
dc.description.abstractIn this work, we present a detailed analysis of the second-order piezoelectric effect in c-plane InxGa1xN/GaN quantum dots and its consequences for electronic and optical properties of these systems. Special attention is paid to the impact of increasing In content x on the results. We find that in general the second-order piezoelectric effect leads to an increase in the electrostatic built-in field. Furthermore, our results show that for an In content 30%, this increase in the built-in field has a significant effect on the emission wavelength and the radiative lifetimes. For instance, at 40% In, the radiative lifetime is more than doubled when taking second-order piezoelectricity into account. Overall, our calculations reveal that when designing and describing the electronic and optical properties of c-plane InxGa1xN/GaN quantum dot based light emitters with high In contents, second-order piezoelectric effects cannot be neglected.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid103103
dc.identifier.citationPatra, S. K. and Schulz, S. (2017) 'Impact of second-order piezoelectricity on electronic and optical properties of c-plane InxGa12xN quantum dots: consequences for long wavelength emitters', Applied Physics Letters, 111(10), 103103 (5pp). doi:10.1063/1.4991720en
dc.identifier.doi10.1063/1.4991720
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued10en
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.urihttps://hdl.handle.net/10468/5748
dc.identifier.volume111en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/13/SIRG/2210/IE/Shaping the electronic and optical properties of non- and semi-polar nitride-based semiconductor nanostructures/en
dc.rights© 2017, the Authors. Published by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the authors and AIP Publishing. The following article appeared in Patra, S. K. and Schulz, S., Applied Physics Letters, 111(10), 103103 (5pp), and may be found at http://dx.doi.org/10.1063/1.4991720en
dc.subjectSecond-order piezoelectric effecten
dc.subjectElectrostatic built-in fielden
dc.subjectEmission wavelengthen
dc.subjectRadiative lifetimeen
dc.titleImpact of second-order piezoelectricity on electronic and optical properties of c-plane InxGa12xN quantum dots: consequences for long wavelength emittersen
dc.typeArticle (peer-reviewed)en
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