Synthesis and applications of one dimensional semiconductors

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dc.contributor.authorBarth, Sven
dc.contributor.authorHernandez-Ramirez, Francisco
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorRomano-Rodriguez, Albert
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderSeventh Framework Programmeen
dc.date.accessioned2018-08-28T11:22:40Z
dc.date.available2018-08-28T11:22:40Z
dc.date.issued2010-02-13
dc.date.updated2018-08-06T15:55:03Z
dc.description.abstractNanoscale inorganic materials such as quantum dots (0-dimensional) and one-dimensional (1D) structures, such as nanowires, nanobelts and nanotubes, have gained tremendous attention within the last decade. Among the huge variety of 1D nanostructures, semiconducting nanowires have gained particular interest due to their potential applications in optoelectronic and electronic devices. Despite the huge efforts to control and understand the growth mechanisms underlying the formation of these highly anisotropic structures, some fundamental phenomena are still not well understood. For example, high aspect-ratio semiconductors exhibit unexpected growth phenomena, e.g. diameter-dependent and temperature-dependent growth directions, and unusual high doping levels or compositions, which are not known for their macroscopic crystals or thin-film counterparts. This article reviews viable synthetic approaches for growing high aspect-ratio semiconductors from bottom-up techniques, such as crystal structure governed nucleation, metal-promoted vapour phase and solution growth, formation in non-metal seeded gas-phase processes, structure directing templates and electrospinning. In particular new experimental findings and theoretical models relating to the frequently applied vapour–liquid–solid (VLS) growth are highlighted. In addition, the top-down application of controlled chemical etching, using novel masking techniques, is described as a viable approach for generating certain 1D structures. The review highlights the controlled synthesis of semiconducting nanostructures and heterostructures of silicon, germanium, gallium nitride, gallium arsenide, cadmium sulphide, zinc oxide and tin oxide. The alignment of 1D nanostructures will be reviewed briefly. Whilst specific and reliable contact procedures are still a major challenge for the integration of 1D nanostructures as active building blocks, this issue will not be the focus of this paper. However, the promising applications of 1D semiconductors will be highlighted, particularly with reference to surface dependent electronic transduction (gas and biological sensors), energy generation (nanomechanical and photovoltaic) devices, energy storage (lithium storage in battery anodes) as well as nanowire photonics.en
dc.description.sponsorshipScience Foundation Ireland (Grants 07/RFP/MASF710 and 08/CE/I14320)en
dc.description.statusPeer revieweden
dc.description.versionSubmitted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationBarth, S., Hernandez-Ramirez, F., Holmes, J. D. and Romano-Rodriguez, A. (2010) 'Synthesis and applications of one-dimensional semiconductors', Progress in Materials Science, 55(6), pp. 563-627.en
dc.identifier.doi10.1016/j.pmatsci.2010.02.001
dc.identifier.endpage627en
dc.identifier.issn0079-6425
dc.identifier.journaltitleProgress in Materials Scienceen
dc.identifier.startpage563en
dc.identifier.urihttps://hdl.handle.net/10468/6645
dc.identifier.volume55en
dc.language.isoenen
dc.publisherElsevieren
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Frontiers Programme (RFP)/07/RFP/MASF710/IE/Nanocable Arrays for Future Electronics/en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::NMP/247768/EU/Surface ionization and novel concepts in nano-MOX gas sensors with increased Selectivity, Sensitivity and Stability for detection of low concentrations of toxic and explosive agents./S3en
dc.relation.project08 CE I1432
dc.relation.urihttp://www.sciencedirect.com/science/article/pii/S0079642510000149
dc.rights© 2010 Elsevier Ltd. All rights reserved. This submitted manuscript version is made available under the CC-BY-NC-ND 4.0 licenseen
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectSemiconductor growthen
dc.subjectAspect ratioen
dc.subjectCadmiumen
dc.subjectCrystal structureen
dc.subjectCrystalsen
dc.subjectFilm growthen
dc.subjectGallium alloysen
dc.subjectGallium arsenideen
dc.subjectGallium nitrideen
dc.subjectGermanium oxidesen
dc.subjectLithiumen
dc.subjectNanobeltsen
dc.subjectNanowiresen
dc.subjectSemiconducting gallium arsenideen
dc.subjectSemiconducting germaniumen
dc.subjectSemiconducting siliconen
dc.subjectSemiconducting silicon compoundsen
dc.subjectSemiconductor dopingen
dc.subjectSemiconductor quantum dotsen
dc.subjectTinen
dc.subjectTitanium compoundsen
dc.subjectZincen
dc.subjectZinc oxideen
dc.subjectZinc sulfideen
dc.titleSynthesis and applications of one dimensional semiconductorsen
dc.typeArticle (peer-reviewed)en
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