Pitting and porous layer formation on n-InP anodes

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dc.contributor.authorO'Dwyer, Colm
dc.contributor.authorBuckley, D. Noel
dc.contributor.authorSerantoni, M.
dc.contributor.authorSutton, David
dc.contributor.authorNewcomb, Simon B.
dc.date.accessioned2016-07-14T14:31:48Z
dc.date.available2016-07-14T14:31:48Z
dc.date.issued2003-10
dc.date.updated2012-11-30T12:12:34Z
dc.description.abstractSurface pitting occurs when InP electrodes are anodized in KOH electrolytes at concentrations in the range 2 - 5 mol dm-3. The process has been investigated using atomic force microscopy (AFM) and the results correlated with cross-sectional transmission electron microscopy (TEM) and electroanalytical measurements. AFM measurements show that pitting of the surface occurs and the density of pits is observed to increase with time under both potentiodynamic and potentiostatic conditions. This indicates a progressive pit nucleation process and implies that the development of porous domains beneath the surface is also progressive in nature. Evidence for this is seen in plan view TEM images in which individual domains are seen to be at different stages of development. Analysis of the cyclic voltammograms of InP electrodes in 5 mol dm-3 KOH indicates that, above a critical potential for pit formation, the anodic current is predominantly time dependent and there is little differential dependence of the current on potential. Thus, pores continue to grow with time when the potential is high enough to maintain depletion layer breakdown conditions.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationO'Dwyer, C., Buckley, D. N., Serantoni, M., Sutton, D. and Newcomb, S. B. (2003) 'Pitting and Porous Layer Formation on n-InP Anodes', State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the International Symposium; Orlando,FL; United States; 12-17 October, in Proceedings - Electrochemical Society, Vol. 11, pp. 136-151. ISBN 1-56677-391-1en
dc.identifier.endpage151en
dc.identifier.isbn1-56677-391-1
dc.identifier.journaltitleProceedings - Electrochemical Societyen
dc.identifier.startpage136en
dc.identifier.urihttps://hdl.handle.net/10468/2878
dc.identifier.volume11en
dc.language.isoenen
dc.publisherElectrochemical Societyen
dc.relation.urihttp://ecsdl.org/site/misc/proceedings_volumes.xhtml
dc.rights© 2003, Electrochemical Societyen
dc.subjectAtomic force microscopyen
dc.subjectCyclic voltammetryen
dc.subjectPorous materialsen
dc.subjectSiliconen
dc.subjectTransmission electron microscopyen
dc.subjectCyclic voltammogramsen
dc.subjectPhotonic crystalsen
dc.subjectPit formationen
dc.subjectPorous layer formationen
dc.titlePitting and porous layer formation on n-InP anodesen
dc.typeArticle (peer-reviewed)en
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