Strain induced effects on electronic structure of semi-metallic and semiconducting tin nanowires

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dc.contributor.authorAnsari, Lida
dc.contributor.authorFagas, Gíorgos
dc.contributor.authorGreer, James C.
dc.contributor.funderEuropean Commissionen
dc.contributor.funderSeventh Framework Programmeen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2017-01-20T12:41:22Z
dc.date.available2017-01-20T12:41:22Z
dc.date.issued2014-09-22
dc.date.updated2017-01-17T20:58:13Z
dc.description.abstractSemimetal nanowires are known to undergo a semimetal to semiconductor transition as a consequence of quantum confinement as their diameters are decreased. Using density functional theory calculations, the electronic structure of tin nanowires (SnNWs) under uniaxial strain within a range of 4% to þ4% is investigated. It is demonstrated that a [110]-oriented semi-metallic SnNW with a diameter of 4.2 nm can be made either more metallic or semiconducting by the application of tensile or compressive strain, respectively. On the contrary, a [100]-oriented semimetallic SnNW with a slightly larger diameter of 4.5 nm remains semiconducting with the application of either compressive or tensile strain. Carrier effective masses are calculated from the band structures; it is shown that for semimetal SnNW along [110] orientation the conduction and valence bands display near linear dispersion under both compressive and tensile strains (<3%) which leads to very small effective masses of 0.007m0. We also show that strain energies and Young modulus vary with nanowire diameter and crystal orientation. The effect of alloying on the generation of tensile and compressive strains in SnNWs is also investigated.en
dc.description.sponsorshipScience Foundation Ireland (Principal Investigator award 13/IA/1956)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid123105
dc.identifier.citationAnsari, L., Fagas, G. and Greer, J. C. (2014) 'Strain induced effects on electronic structure of semi-metallic and semiconducting tin nanowires', Applied Physics Letters, 105(12): 123105. doi:10.1063/1.4896293en
dc.identifier.doi10.1063/1.4896293
dc.identifier.endpage123105-4en
dc.identifier.issn0003-6951
dc.identifier.issued12en
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage123105-1en
dc.identifier.urihttps://hdl.handle.net/10468/3487
dc.identifier.volume105en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/257856/EU/Semiconducting Nanowire Platform for Autonomous Sensors/SINAPSen
dc.rights© 2014, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters 105, 123105 (2014) and may be found at http://dx.doi.org/10.1063/1.4896293en
dc.subjectStrain-induced effectsen
dc.subjectTiN nanowiresen
dc.subjectEpitaxyen
dc.titleStrain induced effects on electronic structure of semi-metallic and semiconducting tin nanowiresen
dc.typeArticle (peer-reviewed)en
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