The nature of silicon nanowire roughness and thermal conductivity suppression by phonon scattering mechanisms
dc.contributor.author | Glynn, Colm | |
dc.contributor.author | Jones, Kim-Marie | |
dc.contributor.author | Mogili, Vishnu | |
dc.contributor.author | McSweeney, William | |
dc.contributor.author | O'Dwyer, Colm | |
dc.contributor.funder | Irish Research Council | en |
dc.contributor.funder | Science Foundation Ireland | en |
dc.date.accessioned | 2017-01-23T15:26:15Z | |
dc.date.available | 2017-01-23T15:26:15Z | |
dc.date.issued | 2017-01-10 | |
dc.date.updated | 2017-01-23T15:11:02Z | |
dc.description.abstract | The nature of the surface roughness of electrolessly etched p-type Si nanowires (NWs) is examined using high resolution transmission electron microscopy and shown to comprise individual silicon nanocrystallites throughout the waviness of the roughness features. As the frequency of roughness features are believed to be sources of surface and boundary scattering, the thermal conductivity below the Casimir limit is still not fully explained. The frequency shift and development of asymmetry in the optical phonon mode in silicon was monitored by Raman scattering measurements as a function of temperature (>1000 K). We assessed the influence of Si NW roughness features on phonon scattering mechanisms including quantum confinement of phonons from roughness nanocrystals, boundary scattering, and optical phonon decay to interacting 3- and 4-phonon processes that may contribute to the cause of significant thermal conductivity suppression in rough Si nanowires. High temperature studies and detailed examination of the substrate of roughness revealed high frequency optical phonon contributions to thermal conductivity suppression. | en |
dc.description.sponsorship | Irish Research Council (Award RS/2011/797); Science Foundation Ireland (SFI under the National Access Programme (NAP 417), and through SFI Technology Innovation and Development Awards 2015 under contract 15/TIDA/2893) | en |
dc.description.status | Peer reviewed | en |
dc.description.version | Published Version | en |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Glynn, C., Jones, K.-M., Mogili, V., McSweeney, W. and O'Dwyer, C. (2017) 'The Nature of Silicon Nanowire Roughness and Thermal Conductivity Suppression by Phonon Scattering Mechanisms', ECS Journal of Solid State Science and Technology, 6(3), pp. N3029-N3035. doi:10.1149/2.0071703jss | en |
dc.identifier.doi | 10.1149/2.0071703jss | |
dc.identifier.endpage | N3035 | en |
dc.identifier.issn | 2162-8769 | |
dc.identifier.issued | 3 | en |
dc.identifier.journaltitle | ECS Journal of Solid State Science and Technology | en |
dc.identifier.startpage | N3029 | en |
dc.identifier.uri | https://hdl.handle.net/10468/3504 | |
dc.identifier.volume | 6 | en |
dc.language.iso | en | en |
dc.publisher | Electrochemical Society | en |
dc.rights | © The Author(s) 2017. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. [DOI: 10.1149/2.0071703jss] All rights reserved. | en |
dc.rights.uri | https://creativecommons.org/licenses/by-nc-nd/4.0/ | en |
dc.subject | Nanostructure | en |
dc.subject | Nanowire | en |
dc.subject | Raman | en |
dc.subject | Silicon | en |
dc.subject | Thermoelectric | en |
dc.title | The nature of silicon nanowire roughness and thermal conductivity suppression by phonon scattering mechanisms | en |
dc.type | Article (peer-reviewed) | en |