Oxygen-vacancy induced ferroelectricity in nitrogen-doped nickel oxide

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dc.contributor.authorDragoman, Mircea
dc.contributor.authorVulpe, Silviu
dc.contributor.authorAperathithis, Elias
dc.contributor.authorAivalioti, Chrysa
dc.contributor.authorRomanitan, Cosmin
dc.contributor.authorDinescu, Adrian
dc.contributor.authorDragoman, Daniela
dc.contributor.authorAldrigo, Martino
dc.contributor.authorDjourelov, Nikolay
dc.contributor.authorModreanu, Mircea
dc.contributor.authorMoldovan, Antoniu
dc.contributor.funderHorizon 2020en
dc.contributor.funderEuropean Regional Development Funden
dc.contributor.funderGovernment of Romaniaen
dc.date.accessioned2022-05-03T12:00:27Z
dc.date.available2022-05-03T12:00:27Z
dc.date.issued2022-04-27
dc.date.updated2022-05-03T11:37:34Z
dc.description.abstractThis paper reports the onset of ferroelectricity in NiO by breaking the crystallographic symmetry with oxygen vacancies created by N doping. Nitrogen-doped NiO was grown at room temperature by RF sputtering of Ni target in Ar–O2–N2 plasma on silicon and fused silica substrates. The impact of the nitrogen doping of NiO on microstructural, optical, and electrical properties has been investigated. According to x-ray diffraction investigations, by increasing the N doping level in NiO, a transition from (002) to a (111) preferential orientation for the cubic NiO phase was observed, as well as a lattice strain relaxation, that is usually ascribed to structural defect formation in crystal. The x-ray diffraction pole figures the presence of a distorted cubic structure in NiO and supports the Rietveld refinement findings related to the strain, which pointed out that nitrogen doping fosters lattice imperfections formation. These findings were found to be in agreement with our far-infrared measurements that revealed that upon nitrogen doping a structural distortion of the NiO cubic phase appears. X-ray photo-emission spectroscopy measurements reveal the presence of oxygen vacancies in the NiO film following nitrogen doping. Evidence of ferro-electricity in nitrogen-doped NiO thin films has been provided by using the well-established Sawyer–Tower method. The results reported here provide the first insights on oxygen-vacancy induced ferroelectricity in nitrogen-doped nickel oxide thin films.en
dc.description.sponsorshipGovernment of Romania and European Regional Development Fund (Extreme Light Infrastructure Nuclear Physics (ELI-NP) Phase II (1/07.07.2016, ID 1334)); European Regional Development Fund (Materials and Processes for Energy and Environment Applications-AENAO (MIS 5002556); NANOTANDEM (MIS 5029191))en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid164304en
dc.identifier.citationDragoman, M., Vulpe, S., Aperathithis, E., Aivalioti, C., Romanitan, C., Dinescu, A., Dragoman, D., Aldrigo, M., Djourelov, N., Modreanu, M. and Moldovan, A. (2022) 'Oxygen-vacancy induced ferroelectricity in nitrogen-doped nickel oxide', Journal of Applied Physics, 131(16), 164304 (11pp). doi: 10.1063/5.0075568en
dc.identifier.doi10.1063/5.0075568en
dc.identifier.eissn1089-7550
dc.identifier.endpage11en
dc.identifier.issn0021-8979
dc.identifier.issued16en
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/13136
dc.identifier.volume131en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/951761/EU/NANOMATERIALS ENABLING SMART ENERGY HARVESTING FOR NEXT-GENERATION INTERNET-OF-THINGS/NANO-EHen
dc.rights© 2022, the Authors. Published under an exclusive license by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared as: Dragoman, M., Vulpe, S., Aperathithis, E., Aivalioti, C., Romanitan, C., Dinescu, A., Dragoman, D., Aldrigo, M., Djourelov, N., Modreanu, M. and Moldovan, A. (2022) 'Oxygen-vacancy induced ferroelectricity in nitrogen-doped nickel oxide', Journal of Applied Physics, 131(16), 164304 (11pp), doi: 10.1063/5.0075568 and may be found at https://doi.org/10.1063/5.0075568en
dc.subjectOxygen-vacancy induced ferroelectricityen
dc.subjectNitrogen-doped nickel oxide thin filmsen
dc.titleOxygen-vacancy induced ferroelectricity in nitrogen-doped nickel oxideen
dc.typeArticle (peer-reviewed)en
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