Broadband light emission from InP based nanostructures using MOVPE

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Date
2025-10-14
Authors
Moynihan, Owen
Ghosh, Samir
Thomas, Kevin
Roycroft, Brendan
Mura, Enrica
Juska, Gediminas
Pelucchi, Emanuele
Corbett, Brian
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Publisher
Institute of Electrical and Electronics Engineers Inc.
Published Version
10.1364/CLEO_SI.2025.SS136_2
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Abstract
A novel nanostructured material embedded in a p-n diode structure is introduced.
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Keywords
Nanomaterials , Broadband light emmission , Broad emmission band , Active region , molecular beam epitaxy , quantum wells , Broadband light source , [TyndallPhotonics]
Citation
Moynihan, O, Ghosh, S, Thomas, K, Roycroft, B, Mura, E, Juska, G, Pelucchi, E & Corbett, B 2025, Broadband light emission from InP based nanostructures using MOVPE. in 2025 Conference on Lasers and Electro-Optics, CLEO 2025. 2025 Conference on Lasers and Electro-Optics, CLEO 2025, Institute of Electrical and Electronics Engineers Inc., 2025 Conference on Lasers and Electro-Optics, CLEO 2025, Long Beach, United States, 4/05/25. https://doi.org/10.1364/CLEO_SI.2025.SS136_2
Link to publisher’s version
https://www.scopus.com/pages/publications/105021465223
URI
https://hdl.handle.net/10468/18540
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Tyndall Photonics
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© 2024, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.