Influence of the cavity on the low-temperature photoluminescence of SiGe/Si multiquantum wells grown on a silicon-on-insulator substrate

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dc.contributor.authorLi, C. B.
dc.contributor.authorCheng, B. W.
dc.contributor.authorZuo, Y. H.
dc.contributor.authorMorrison, Alan P.
dc.contributor.authorYu, J. Z.
dc.contributor.authorWang, Q. M.
dc.contributor.funderNational Natural Science Foundation of China
dc.date.accessioned2017-07-28T13:20:07Z
dc.date.available2017-07-28T13:20:07Z
dc.date.issued2006
dc.description.abstractThe influences of the cavity on the low-temperature photoluminescence of Si0.59Ge0.41/Si multiquantum wells grown on silicon-on-insulator substrates are discussed. The positions of the modulated photoluminescence (PL) peaks not only relate to the nature of SiGe/Si multiquantum wells, but also relate to the characteristic of the cavity. With increasing temperature, a redshift of the modulated PL peak originating from the thermo-optical effect of the cavity is observed. (c) 2006 American Institute of Physics. (DOI:10.1063/1.2187433)en
dc.description.sponsorshipNational Natural Science Foundation of China (Major state basic research program (973) Grant No. G2000036603, “863” Research Plan Grant No. 2002AA312010, and the National Natural Science Foundation of China under Grant Nos. 90104003 and 60336010)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid121901
dc.identifier.citationLi, C. B., Cheng, B. W., Zuo, Y. H., Morrison, A. P., Yu, J. Z. and Wang, Q. M. (2006) 'Influence of the cavity on the low-temperature photoluminescence of SiGe∕Si multiquantum wells grown on a silicon-on-insulator substrate', Applied Physics Letters, 88(12), pp. 121901. doi: 10.1063/1.2187433en
dc.identifier.doi10.1063/1.2187433
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued12
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4390
dc.identifier.volume88
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.2187433
dc.rights© 2006 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Li, C. B., Cheng, B. W., Zuo, Y. H., Morrison, A. P., Yu, J. Z. and Wang, Q. M. (2006) 'Influence of the cavity on the low-temperature photoluminescence of SiGe∕Si multiquantum wells grown on a silicon-on-insulator substrate', Applied Physics Letters, 88(12), pp. 121901 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2187433en
dc.subjectSi-ge alloysen
dc.subjectMultilayer structureen
dc.subjectRoom-temperatureen
dc.subjectQuantum-wellsen
dc.subjectBand-edgeen
dc.subjectHeterostructuresen
dc.subjectIslandsen
dc.titleInfluence of the cavity on the low-temperature photoluminescence of SiGe/Si multiquantum wells grown on a silicon-on-insulator substrateen
dc.typeArticle (peer-reviewed)en
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