Intradot dynamics of InAs quantum dot based electroabsorbers

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dc.contributor.authorPiwonski, Tomasz
dc.contributor.authorPulka, Jaroslaw
dc.contributor.authorMadden, Gillian
dc.contributor.authorHuyet, Guillaume
dc.contributor.authorHoulihan, John
dc.contributor.authorViktorov, Evgeny A.
dc.contributor.authorErneux, Thomas
dc.contributor.authorMandel, Paul
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderInstitutes of Technology Ireland
dc.contributor.funderFonds De La Recherche Scientifique - FNRS
dc.date.accessioned2017-07-28T11:47:32Z
dc.date.available2017-07-28T11:47:32Z
dc.date.issued2009
dc.description.abstractThe carrier relaxation and escape dynamics of InAs/GaAs quantum dot waveguide absorbers is studied using heterodyne pump-probe measurements. Under reverse bias conditions, we reveal differences in intradot relaxation dynamics, related to the initial population of the dots' ground or excited states. These differences can be attributed to phonon-assisted or Auger processes being dominant for initially populated ground or excited states, respectively. (C) 2009 American Institute of Physics. (DOI: 10.1063/1.3106633)en
dc.description.sponsorshipScience Foundation Ireland (Contract No. 07/IN.1/I929); Higher Education Authority (INSPIRE Programme, funded by the Irish Government’s Programme for Research in Third Level Institutions, Cycle 4, National Development Plan 2007-2013) Institutes of Technology Ireland (Strand I Programme);en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid123504
dc.identifier.citationPiwonski, T., Pulka, J., Madden, G., Huyet, G., Houlihan, J., Viktorov, E. A., Erneux, T. and Mandel, P. (2009) 'Intradot dynamics of InAs quantum dot based electroabsorbers', Applied Physics Letters, 94(12), pp. 123504. doi: 10.1063/1.3106633en
dc.identifier.doi10.1063/1.3106633
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued12
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4361
dc.identifier.volume94
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3106633
dc.rights© 2009 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Piwonski, T., Pulka, J., Madden, G., Huyet, G., Houlihan, J., Viktorov, E. A., Erneux, T. and Mandel, P. (2009) 'Intradot dynamics of InAs quantum dot based electroabsorbers', Applied Physics Letters, 94(12), pp. 123504 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3106633en
dc.subjectLasersen
dc.subjectAuger effecten
dc.subjectCarrier relaxation timeen
dc.subjectElectroabsorptionen
dc.subjectElectro-optical devicesen
dc.subjectExcited statesen
dc.subjectGallium arsenideen
dc.subjectGround statesen
dc.subjectIII-V semiconductorsen
dc.subjectIndium compoundsen
dc.subjectNonlinear opticsen
dc.subjectOptical materialsen
dc.subjectOptical waveguidesen
dc.subjectPhononsen
dc.subjectSemiconductor quantum dotsen
dc.subjectQuantum dotsen
dc.subjectWettingen
dc.subjectCarrier relaxation timesen
dc.subjectExcited statesen
dc.titleIntradot dynamics of InAs quantum dot based electroabsorbersen
dc.typeArticle (peer-reviewed)en
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