Impact of cation-based localized electronic states on the conduction and valence band structure of Al1-xInxN alloys

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dc.contributor.authorSchulz, Stefan
dc.contributor.authorCaro, Miguel A.
dc.contributor.authorO'Reilly, Eoin P.
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderSeventh Framework Programme
dc.date.accessioned2017-07-25T14:16:23Z
dc.date.available2017-07-25T14:16:23Z
dc.date.issued2014
dc.description.abstractWe demonstrate that cation-related localized states strongly perturb the band structure of Al1-xInxN leading to a strong band gap bowing at low In content. Our first-principles calculations show that In-related localized states are formed both in the conduction and the valence band in Al1-xInxN for low In composition, x, and that these localized states dominate the evolution of the band structure with increasing x. Therefore, the commonly used assumption of a single composition-independent bowing parameter breaks down when describing the evolution both of the conduction and of the valence band edge in Al1-xInxN. (C) 2014 AIP Publishing LLC.en
dc.description.sponsorshipScience Foundation Ireland (10/IN.1/I2994)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid172102
dc.identifier.citationSchulz, S., Caro, M. A. and O'Reilly, E. P. (2014) 'Impact of cation-based localized electronic states on the conduction and valence band structure of Al1−xInxN alloys', Applied Physics Letters, 104(17), pp. 172102. doi: 10.1063/1.4872317en
dc.identifier.doi10.1063/1.4872317
dc.identifier.endpage4
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued17
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4256
dc.identifier.volume104
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::NMP/280587/EU/AlGaInN materials on semi-polar templates for yellow emission in solid state lighting applications/ALIGHT
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.4872317
dc.rights© 2014 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Schulz, S., Caro, M. A. and O'Reilly, E. P. (2014) 'Impact of cation-based localized electronic states on the conduction and valence band structure of Al1−xInxN alloys', Applied Physics Letters, 104(17), pp. 172102 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4899123en
dc.subjectSemiconductorsen
dc.subjectNitrogenen
dc.subjectOffsetsen
dc.subjectParametersen
dc.subjectEnergyen
dc.subjectAluminiumen
dc.subjectLocalized statesen
dc.subjectIII-V semiconductorsen
dc.subjectBand gapen
dc.subjectBand structureen
dc.titleImpact of cation-based localized electronic states on the conduction and valence band structure of Al1-xInxN alloysen
dc.typeArticle (peer-reviewed)en
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