Influence of channel material properties on performance of nanowire transistors

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dc.contributor.authorRazavi, Pedram
dc.contributor.authorFagas, GĂ­orgos
dc.contributor.authorFerain, Isabelle
dc.contributor.authorYu, Ran
dc.contributor.authorDas, Samaresh
dc.contributor.authorColinge, Jean-Pierre
dc.contributor.funderEuropean Commission
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-09-20T10:06:33Z
dc.date.available2017-09-20T10:06:33Z
dc.date.issued2012
dc.description.abstractThe performance of germanium and silicon inversion-mode and junctionless nanowire field-effect transistors are investigated using three-dimensional quantum mechanical simulations in the ballistic transport regime and within the framework of effective-mass theory for different channel materials and orientations. Our study shows that junctionless nanowire transistors made using n-type Ge or Si nanowires as a channel material are more immune to short-channel effects than conventional inversion-mode nanowire field-effect transistors. As a result, these transistors present smaller subthreshold swing, less drain-induced barrier-lowering, lower source-to-drain tunneling, and higher I-on/I-off ratio for the same technology node and low standby power technologies. We also show that the short-channel characteristics of Ge and Si junctionless nanowire transistors, unlike the inversion-mode nanowire transistors, are very similar. The results are explained through a detailed analysis on the effect of the channel crystallographic orientation, effective masses, and dielectric constant on electrical characteristics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729777]en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid124509
dc.identifier.citationRazavi, P., Fagas, G., Ferain, I., Yu, R., Das, S. and Colinge, J.-P. (2012) 'Influence of channel material properties on performance of nanowire transistors', Journal of Applied Physics, 111(12), 124509 (8pp). doi: 10.1063/1.4729777en
dc.identifier.doi10.1063/1.4729777
dc.identifier.endpage8
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.issued12
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4731
dc.identifier.volume111
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/05/IN/I888/IE/Advanced Scalable Silicon-on-Insulator Devices for Beyond-End-of-Roadmap Semiconductor Technology/
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/10/IN.1/I2992/IE/Semiconductor Nanowire Transistors (SENATOR)/
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/257111/EU/Silicon Quantum Wire Transistors/SQWIRE
dc.relation.urihttp://aip.scitation.org/doi/10.1063/1.4729777
dc.rights© 2012, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Razavi, P., Fagas, G., Ferain, I., Yu, R., Das, S. and Colinge, J.-P. (2012) 'Influence of channel material properties on performance of nanowire transistors', Journal of Applied Physics, 111(12), 124509 (8pp). doi: 10.1063/1.4729777 and may be found at http://aip.scitation.org/doi/10.1063/1.4729777en
dc.subjectElemental semiconductorsen
dc.subjectNanowiresen
dc.subjectGermaniumen
dc.subjectTunnelingen
dc.subjectEffective massen
dc.titleInfluence of channel material properties on performance of nanowire transistorsen
dc.typeArticle (peer-reviewed)en
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