Stabilization of self-focusing instability in wide-aperture semiconductor lasers

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Date
2002
Authors
Voignier, Vincent
Houlihan, John
O'Callaghan, J. R.
Sailliot, C
Huyet, Guillaume
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American Physical Society
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Abstract
A mechanism for the stabilization of the output of filamentary broad-area edge-emitting semiconductor lasers is analyzed experimentally and theoretically. This mechanism occurs when the carrier density is profiled in the transverse direction. The laser structure consisted of a wide-aperture edge-emitting laser diode operating in pulsed mode to avoid thermal guiding effects. The injection current profile was modified from the usual step-function case to a Lorentzian-like profile through the inclusion of a 10 mum p-type epitaxial spreading layer. The resulting nonlinear transverse mode is described and the possibility of its observation in two transverse dimensions is discussed.
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Keywords
Linewidth enhancement factor , Large fresnel number , Broad-area lasers , Pattern-formation , Spatiotemporal dynamics , Transverse section , Nonlinear optics , Lateral-modes , Gain , Waves
Citation
Voignier, V., Houlihan, J., O’Callaghan, J. R., Sailliot, C. and Huyet, G. (2002) 'Stabilization of self-focusing instability in wide-aperture semiconductor lasers', Physical Review A, 65(5), 053807 (5pp). doi: 10.1103/PhysRevA.65.053807
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© 2002, American Physical Society