Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods

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dc.contributor.authorConroy, Michele
dc.contributor.authorZubialevich, Vitaly Z.
dc.contributor.authorLi, Haoning
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorParbrook, Peter J.
dc.contributor.funderHigher Education Authorityen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderEuropean Commissionen
dc.date.accessioned2016-02-02T14:56:12Z
dc.date.available2016-02-02T14:56:12Z
dc.date.issued2014-11-13
dc.date.updated2014-12-15T11:14:45Z
dc.description.abstractWe report an inexpensive nanoscale patterning process for epitaxial lateral overgrowth (ELOG) in AlN layers grown by metal organic vapour phase epitaxy (MOVPE) on sapphire. The pattern was produced by an inductively coupled plasma etch using a self-assembled monolayer of silica spheres on AlN as the lithographic mask. The resulting uniform 1 [small mu ]m length rod structure across a wafer showed a massive reduction in threading dislocations (TDs) when annealed at 1100 [degree]C. Overgrowing homoepitaxial AlN on top of the nanorods, at a temperature of 1100 [degree]C, produced a crack free coalesced film with approximately 4 [small mu ]m of growth, which is formed at a much lower temperature compared to that typically required for microscale ELOG. The improved crystal quality, in terms of TD reduction, of the AlN above the rods was determined by detailed weak beam (WB) electron microscopy studies and showed that the threading dislocation density (TDD) was greatly reduced, by approximately two orders of magnitude in the case for edge-type dislocations. In situ reflectance measurements during the overgrowth allowed for thickness coalescence to be estimated along with wafer curvature changes. The in situ measurements also confirmed that tensile strain built up at a much slower rate in the ELOG AlN layer compared to that of AlN prepared directly on sapphire.en
dc.description.sponsorshipHigher Education Authority (Programme for Research in Third Level Institutions Cycles 4 and 5 via the INSPIRE and TYFFANI projects); Science Foundation Ireland (SFI Grant no. SFI/10/IN.1/I2993), SFI Professorship scheme (07/EN/E001A)); Irish Government's Programme for Research in Third Level Institutions Cycle 5, National Development Plan 2007–2013 with the assistance of the European Regional Development Fund.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationCONROY, M., ZUBIALEVICH, V. Z., LI, H., PETKOV, N., HOLMES, J. D. & PARBROOK, P. J. 2015. Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods. Journal of Materials Chemistry C, 3, 431-437. http://dx.doi.org/10.1039/C4TC01536Cen
dc.identifier.doi10.1039/c4tc01536c
dc.identifier.endpage437en
dc.identifier.issn2050-7526
dc.identifier.issued2en
dc.identifier.journaltitleJournal of Materials Chemistry Cen
dc.identifier.startpage431en
dc.identifier.urihttps://hdl.handle.net/10468/2241
dc.identifier.volume3en
dc.language.isoenen
dc.publisherRoyal Society of Chemistryen
dc.rights© The Royal Society of Chemistry 2015en
dc.subjectEpitaxial growthen
dc.subjectFilm growthen
dc.subjectInductively coupled plasmaen
dc.subjectLithographyen
dc.subjectMetallorganic vapor phase epitaxyen
dc.subjectNanorodsen
dc.subjectOrganometallicsen
dc.subjectSapphireen
dc.subjectSelf assembled monolayersen
dc.subjectTensile strainen
dc.subjectEpitaxial lateral overgrowthen
dc.subjectIn-situ measurementen
dc.subjectMetal-organic vapour phase epitaxyen
dc.subjectNanoscale patterningen
dc.subjectOrders of magnitudeen
dc.subjectSitu reflectance measurementsen
dc.subjectThreading dislocationen
dc.subjectThreading dislocation densitiesen
dc.subjectEdge dislocationsen
dc.titleEpitaxial lateral overgrowth of AlN on self-assembled patterned nanorodsen
dc.typeArticle (peer-reviewed)en
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