Assessing the correlation between location and size of catastrophic breakdown events in high-K MIM capacitors

dc.contributor.authorMuñoz-Gorriz, J.
dc.contributor.authorBlachier, D.
dc.contributor.authorReimbold, G.
dc.contributor.authorCampabadal, F.
dc.contributor.authorSune, J.
dc.contributor.authorMonaghan, Scott
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorHurley, Paul K.
dc.contributor.authorMiranda, E.
dc.contributor.funderCommissariat à l'Énergie Atomique et aux Énergies Alternativesen
dc.date.accessioned2022-08-24T12:31:02Z
dc.date.available2022-08-24T12:31:02Z
dc.date.issued2019-05-15
dc.date.updated2022-08-24T12:20:48Z
dc.description.abstractThe connection between the spatial location of catastrophic breakdown spots occurring in metal-insulator-metal capacitors with a high-permittivity dielectric film (HfO 2 ) and their respective sizes is investigated. Large area structures (10 4 -10 5 μm 2 ) are used for this correlation assessment since, for statistical considerations, a large number of spots in the same device is imperatively required. The application of ramped or constant voltage stress across the capacitor generates defects inside the dielectric that result in the formation of multiple failure sites. High power dissipation takes place locally, leaving a permanent mark on the top electrode of the device. The set of marks constitutes a point pattern with attributes that can be analyzed from a statistical viewpoint. The correlation between the spot locations and their sizes is assessed through the mark correlation function and the method of reverse conditional moments. The study reveals that for severely damaged devices, there exists a link between the spot location and size that leads to a short range departure from a complete spatial randomness (CSR) process. It is shown that the affected region around each failure site is actually larger than the visible area of the spot. A structural modification of the dielectric layer in the vicinity of the spot caused by the huge thermal effects occurring just before the microexplosion might be the reason behind this extension of the damage.en
dc.description.sponsorshipCommissariat à l'Énergie Atomique et aux Énergies Alternatives (ASCENT project)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationMuñoz-Gorriz, J., Blachier, D., Reimbold, G., Campabadal, F., Sune, J., Monaghan, S., Cherkaoui, K., Hurley, P. K. and Miranda, E. (2019) 'Assessing the correlation between location and size of catastrophic breakdown events in high-K MIM capacitors', IEEE Transactions on Device and Materials Reliability, 19(2), pp. 452-460. doi: 10.1109/TDMR.2019.2917138en
dc.identifier.doi10.1109/TDMR.2019.2917138en
dc.identifier.eissn1558-2574
dc.identifier.endpage460en
dc.identifier.issn1530-4388
dc.identifier.issued2en
dc.identifier.journaltitleIEEE Transactions on Device and Materials Reliabilityen
dc.identifier.startpage452en
dc.identifier.urihttps://hdl.handle.net/10468/13496
dc.identifier.volume19en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.rights© 2019, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectHigh-Ken
dc.subjectReliabilityen
dc.subjectOxide breakdownen
dc.subjectSpatial statisticsen
dc.titleAssessing the correlation between location and size of catastrophic breakdown events in high-K MIM capacitorsen
dc.typeArticle (peer-reviewed)en
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