Si/SiGe electron resonant tunneling diodes with graded spacer wells

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dc.contributor.authorPaul, D. J.
dc.contributor.authorSee, P.
dc.contributor.authorBates, R.
dc.contributor.authorGriffin, N.
dc.contributor.authorCoonan, Barry P.
dc.contributor.authorRedmond, Gareth
dc.contributor.authorCrean, Gabriel M.
dc.contributor.authorZozoulenko, I. V.
dc.contributor.authorBerggren, K. F.
dc.contributor.authorHollander, B.
dc.contributor.authorMantl, S.
dc.contributor.funderFourth Framework Programme
dc.date.accessioned2017-07-28T13:29:55Z
dc.date.available2017-07-28T13:29:55Z
dc.date.issued2001
dc.description.abstractResonant tunneling diodes have been fabricated using graded Si(1-x)Ge(x) (x=0.3 -->0.0) spacer wells and strained Si(0.4)Ge(0.6) barriers on a relaxed Si(0.7)Ge(0.3) n-type substrate which demonstrates negative differential resistance at up to 100 K. This design is aimed at reducing the voltage at which the peak current density is achieved. Peak current densities of 0.08 A/cm(2) with peak-to-valley current ratios of 1.67 have been achieved for a low peak voltage of 40 mV at 77 K. This represents an improvement of over an order of magnitude compared to previous work. (C) 2001 American Institute of Physics. (DOI: 10.1063/1.1381042)en
dc.description.sponsorshipEuropean Commission (under the Framework IV MEL-ARI project SiQUIC Project No. 22987)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationPaul, D. J., See, P., Bates, R., Griffin, N., Coonan, B. P., Redmond, G., Crean, G. M., Zozoulenko, I. V., Berggren, K.-F., Holländer, B. and Mantl, S. (2001) 'Si/SiGe electron resonant tunneling diodes with graded spacer wells', Applied Physics Letters, 78(26), pp. 4184-4186. doi: 10.1063/1.1381042en
dc.identifier.doi10.1063/1.1381042
dc.identifier.endpage4186
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued26
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage4184
dc.identifier.urihttps://hdl.handle.net/10468/4407
dc.identifier.volume78
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.1381042
dc.rights© 2001 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Paul, D. J., See, P., Bates, R., Griffin, N., Coonan, B. P., Redmond, G., Crean, G. M., Zozoulenko, I. V., Berggren, K.-F., Holländer, B. and Mantl, S. (2001) 'Si/SiGe electron resonant tunneling diodes with graded spacer wells', Applied Physics Letters, 78(26), pp. 4184-4186 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1381042en
dc.subjectGermaniumen
dc.subjectCurrent densityen
dc.subjectResonant tunneling diodesen
dc.subjectNegative resistanceen
dc.titleSi/SiGe electron resonant tunneling diodes with graded spacer wellsen
dc.typeArticle (peer-reviewed)en
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