The curious case of thin-body Ge crystallization

Simple item page
dc.contributor.authorDuffy, Ray
dc.contributor.authorShayesteh, M.
dc.contributor.authorMcCarthy, Brendan
dc.contributor.authorBlake, Alan
dc.contributor.authorWhite, Mary
dc.contributor.authorScully, J.
dc.contributor.authorYu, R.
dc.contributor.authorKelleher, Anne-Marie
dc.contributor.authorSchmidt, Michael
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorPelaz, L.
dc.contributor.authorMarques, L. A.
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-28T10:48:31Z
dc.date.available2017-07-28T10:48:31Z
dc.date.issued2011
dc.description.abstractThe authors investigate the templated crystallization of thin-body Ge fin structures with high aspect ratios. Experimental variables include fin thickness and thermal treatments, with fin structures oriented in the < 110 > direction. Transmission electron microscopy determined that various crystal defects form during crystallization of amorphous Ge regions, most notably (111) stacking faults, twin boundaries, and small crystallites. In all cases, the nature of the defects is dependent on the fin thickness and thermal treatments applied. Using a standard 600 degrees C rapid-thermal-anneal, Ge structures with high aspect ratios crystallize with better crystal quality and fewer uncured defects than the equivalent Si case, which is a cause for optimism for thin-film Ge devices. (C) 2011 American Institute of Physics. (doi:10.1063/1.3643160)en
dc.description.sponsorshipScience Foundation Ireland (09/SIRG/I1623, 09/SIRG/I1621)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid131910
dc.identifier.citationDuffy, R., Shayesteh, M., McCarthy, B., Blake, A., White, M., Scully, J., Yu, R., Kelleher, A.-M., Schmidt, M., Petkov, N., Pelaz, L. and Marqués, L. A. (2011) 'The curious case of thin-body Ge crystallization', Applied Physics Letters, 99(13), pp. 131910.en
dc.identifier.doi10.1063/1.3643160
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued13
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4314
dc.identifier.volume99
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3643160
dc.rights© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Duffy, R., Shayesteh, M., McCarthy, B., Blake, A., White, M., Scully, J., Yu, R., Kelleher, A.-M., Schmidt, M., Petkov, N., Pelaz, L. and Marqués, L. A. (2011) 'The curious case of thin-body Ge crystallization', Applied Physics Letters, 99(13), pp. 131910 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3643160en
dc.subjectIon-implantationen
dc.subjectGermaniumen
dc.subjectLayersen
dc.subjectCrystalsen
dc.subjectSiliconen
dc.subjectFielden
dc.subjectAnnealingen
dc.subjectCrystallisationen
dc.subjectCrystallitesen
dc.subjectElemental semiconductorsen
dc.subjectStacking faultsen
dc.subjectTransmission electron microscopyen
dc.subjectTwin boundariesen
dc.subjectCrystal defectsen
dc.titleThe curious case of thin-body Ge crystallizationen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
3289.pdf
Size:
1.43 MB
Format:
Adobe Portable Document Format
Description:
Published Version
Download
Collections
Tyndall National Institute - Journal Articles