Carrier trapping study on a Ge nanocrystal by two-pass lift mode electrostatic force microscopy

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dc.contributor.authorLin, Zhen
dc.contributor.authorBrunkov, Pavel N.
dc.contributor.authorBassani, Franck
dc.contributor.authorDescamps, Armel
dc.contributor.authorO'Dwyer, Colm
dc.contributor.authorBremond, Georges
dc.date.accessioned2018-05-28T15:01:31Z
dc.date.available2018-05-28T15:01:31Z
dc.date.issued2015-03
dc.date.updated2018-05-03T07:58:03Z
dc.description.abstractTrapped charges inside an isolated germanium nanocrystal (Ge NC) have been studied by two-pass lift mode electrostatic force microscopy (EFM) measurements at room temperature. From visualized EFM images, electrons and holes were proven to be successfully injected and trapped in the Ge NC and distributed homogenously at the edge of its truncated spherical morphology. The Ge NC is found to have iso-potential surface and behave as a conductive material after being charged. It is also shown that the dominant charge decay mechanism during discharging of Ge NCs is related to the leakage of these trapped charges. A truncated capacitor model is used to approximate the real capacitance between the tip and Ge NC surface and to quantitatively study these trapped charges. These investigations demonstrate the potential for Ge nanocrystal memory applications.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationLin, Z., Brunkov, P., Bassani, F., Descamps, A., O’Dwyer, C. and Bremond, G. (2015) 'Carrier trapping study on a Ge nanocrystal by two-pass lift mode electrostatic force microscopy', Materials Research Express, 2(3), 035001 (10pp). doi: 10.1088/2053-1591/2/3/035001en
dc.identifier.doi10.1088/2053-1591/2/3/035001
dc.identifier.endpage035001-10en
dc.identifier.issn2053-1591
dc.identifier.journaltitleMaterials Research Expressen
dc.identifier.startpage035001-1en
dc.identifier.urihttps://hdl.handle.net/10468/6200
dc.identifier.volume2en
dc.language.isoenen
dc.publisherIOP Publishingen
dc.relation.urihttp://iopscience.iop.org/2053-1591/2/3/035001/article
dc.rightsThis is an author-created, un-copyedited version of an article accepted for publication in Materials Research Express. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/2053-1591/2/3/035001en
dc.subjectElectrostatic force microscopyen
dc.subjectGermanium nanocrystalen
dc.subjectMemory deviceen
dc.subjectNanostructureen
dc.titleCarrier trapping study on a Ge nanocrystal by two-pass lift mode electrostatic force microscopyen
dc.typeArticle (peer-reviewed)en
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