Optimization of annealing conditions to enhance thermoelectric performance of electrodeposited p-type BiSbTe thin films

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dc.contributor.authorLal, Swatchith
dc.contributor.authorGautam, Devendraprakash
dc.contributor.authorRazeeb, Kafil M.
dc.contributor.funderHorizon 2020en
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderEuropean Regional Development Funden
dc.date.accessioned2019-11-19T10:07:15Z
dc.date.available2019-11-19T10:07:15Z
dc.date.issued2019-03-04
dc.description.abstractIn this work, we report the optimization of annealing process to improve the thermoelectric properties of pulse electrodeposited bismuth antimony telluride (Bi–Sb–Te) films by varying the annealing time-temperature profile. The innovative approach of sandwiched Te in between the Bi–Sb–Te layers aids in compensating the loss of tellurium during the annealing of BiSbTe thin films. An optimized Seebeck coefficient of 90.5 µV/K along with a power factor of 240 µW/mK2 is achieved for samples annealed at 350 °C for 1 h under N2 atmosphere with controlled heating and cooling rates. These improvements are attributed to a significant decrease in the carrier concentration as substantiated by the Hall measurements and to the increase in the crystallite size at the elevated temperatures as indicated by the X-ray diffraction pattern data. A comprehensive study on the annealing parameters reveals that the Seebeck coefficient and the electrical conductivity are considerably more sensitive to the annealing temperature than compared to the annealing time.en
dc.description.sponsorshipSFI16/IFB/4587en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid031102en
dc.identifier.citationLal, S., Gautam, D. and Razeeb, K.M., 2019. Optimization of annealing conditions to enhance thermoelectric performance of electrodeposited p-type BiSbTe thin films. APL Materials, 7(3), (031102). DOI:10.1063/1.5049586en
dc.identifier.doi10.1063/1.5049586en
dc.identifier.eissn2166-532X
dc.identifier.endpage9en
dc.identifier.issued3en
dc.identifier.journaltitleAPL Materialsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/9031
dc.identifier.volume7en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/644453/EU/Thermally Integrated Smart Photonics Systems/TIPSen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3160/IE/Thermoelectric efficiency of IV-VI and V2-VI3 materials driven near phase transitions/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres/13/RC/2077/IE/CONNECT: The Centre for Future Networks & Communications/en
dc.relation.urihttps://aip.scitation.org/doi/10.1063/1.5049586
dc.rights© The Author(s) 2019en
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en
dc.subjectAnnealingen
dc.subjectAntimony compoundsen
dc.subjectBismuth compoundsen
dc.subjectCarrier densityen
dc.subjectCarrier mobilityen
dc.subjectCrystallitesen
dc.subjectElectrical conductivityen
dc.subjectElectrodepositionen
dc.subjectHall effecten
dc.subjectInsulating thin filmsen
dc.subjectSeebeck effecten
dc.subjectX-ray diffractionen
dc.titleOptimization of annealing conditions to enhance thermoelectric performance of electrodeposited p-type BiSbTe thin filmsen
dc.typeArticle (peer-reviewed)en
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