Bistable nanoelectromechanical devices

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dc.contributor.authorZiegler, Kirk J.
dc.contributor.authorLyons, Daniel M.
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorErts, Donats
dc.contributor.authorPolyakov, Boris
dc.contributor.authorOlin, H.
dc.contributor.authorSvensson, K.
dc.contributor.authorOlsson, E.
dc.contributor.funderEnterprise Ireland
dc.contributor.funderHigher Education Authority
dc.contributor.funderLatvijas Zinātnes Padome
dc.contributor.funderLatvijas Universitate
dc.date.accessioned2017-07-28T13:29:54Z
dc.date.available2017-07-28T13:29:54Z
dc.date.issued2004
dc.description.abstractA combined transmission electron microscopy-scanning tunneling microscopy (TEM-STM) technique has been used to investigate the force interactions of silicon and germanium nanowires with gold electrodes. The I(V) data obtained typically show linear behavior between the gold electrode and silicon nanowires at all contact points, whereas the linearity of I(V) curves obtained for germanium nanowires were dependent on the point of contact. Bistable silicon and germanium nanowire-based nanoelectromechanical programmable read-only memory (NEMPROM) devices were demonstrated by TEM-STM. These nonvolatile NEMPROM devices have switching potentials as low as 1 V and are highly stable making them ideal candidates for low-leakage electronic devices. (C) 2004 American Institute of Physics. (DOI:10.1063/1.1751622)en
dc.description.sponsorshipEnterprise Ireland (Postdoctoral fellowship);en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationZiegler, K. J., Lyons, D. M., Holmes, J. D., Erts, D., Polyakov, B., Olin, H., Svensson, K. and Olsson, E. (2004) 'Bistable nanoelectromechanical devices', Applied Physics Letters, 84(20), pp. 4074-4076. doi: 10.1063/1.1751622en
dc.identifier.doi10.1063/1.1751622
dc.identifier.endpage4076
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued20
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage4074
dc.identifier.urihttps://hdl.handle.net/10468/4398
dc.identifier.volume84
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.1751622
dc.rights© 2004 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Ziegler, K. J., Lyons, D. M., Holmes, J. D., Erts, D., Polyakov, B., Olin, H., Svensson, K. and Olsson, E. (2004) 'Bistable nanoelectromechanical devices', Applied Physics Letters, 84(20), pp. 4074-4076 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1751622en
dc.subjectNanowire building-blocksen
dc.subjectAtomic-force microscopyen
dc.subjectCarbon-nanotubeen
dc.subjectElectronic devicesen
dc.subjectConductanceen
dc.subjectFrequencyen
dc.subjectContacten
dc.subjectMemoryen
dc.subjectSingleen
dc.subjectLogicen
dc.subjectElemental semiconductorsen
dc.subjectSiliconen
dc.subjectNanowiresen
dc.subjectGermaniumen
dc.subjectNanoelectromechanical systemsen
dc.titleBistable nanoelectromechanical devicesen
dc.typeArticle (peer-reviewed)en
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