Field-effect mobility extraction in nanowire field-effect transistors by combination of transfer characteristics and random telegraph noise measurements

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dc.contributor.authorNazarov, Alexei N.
dc.contributor.authorFerain, Isabelle
dc.contributor.authorAkhavan, Nima Dehdashti
dc.contributor.authorRazavi, Pedram
dc.contributor.authorYu, Ran
dc.contributor.authorColinge, Jean-Pierre
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderSeventh Framework Programme
dc.date.accessioned2017-07-28T10:48:31Z
dc.date.available2017-07-28T10:48:31Z
dc.date.issued2011
dc.description.abstractA technique based on the combined measurements of random telegraph-signal noise amplitude and drain current vs. gate voltage characteristics is proposed to extract the channel mobility in inversion-mode and accumulation-mode nanowire transistors. This method does not require the preliminary knowledge of the gate oxide capacitance or that of the channel width. The method accounts for the presence of parasitic source and drain resistance effect. It has been used to extract the zero-field mobility and the field mobility reduction factor in inversion-mode and junctionless transistors operating in accumulation mode. (C) 2011 American Institute of Physics. (doi:10.1063/1.3626038)en
dc.description.sponsorshipScience Foundation Ireland [05/IN/I888, 10/IN.1/12992]; European Community (EC) [216171, 216373]en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid73502
dc.identifier.citationNazarov, A. N., Ferain, I., Akhavan, N. D., Razavi, P., Yu, R. and Colinge, J. P. (2011) 'Field-effect mobility extraction in nanowire field-effect transistors by combination of transfer characteristics and random telegraph noise measurements', Applied Physics Letters, 99(7), pp. 073502. doi: 10.1063/1.3626038en
dc.identifier.doi10.1063/1.3626038
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued7
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4315
dc.identifier.volume99
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216171/EU/Silicon-based nanostructures and nanodevices for long term nanoelectronics applications/NANOSIL
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/216373/EU/European platform for low-power applications on Silicon-on-Insulator Technology/EUROSOI+
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3626038
dc.rights© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Nazarov, A. N., Ferain, I., Akhavan, N. D., Razavi, P., Yu, R. and Colinge, J. P. (2011) 'Field-effect mobility extraction in nanowire field-effect transistors by combination of transfer characteristics and random telegraph noise measurements', Applied Physics Letters, 99(7), pp. 073502 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3626038en
dc.subjectMOSFETsen
dc.subjectNanowiresen
dc.subjectCarrier mobilityen
dc.subjectCapacitanceen
dc.subjectElectric measurementsen
dc.titleField-effect mobility extraction in nanowire field-effect transistors by combination of transfer characteristics and random telegraph noise measurementsen
dc.typeArticle (peer-reviewed)en
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