Development of inverted p-substrate InP/AlGaInAs lasers for vertical integration with multiple passive or active intrinsic regions

dc.contributor.authorDuggan, Shane P.
dc.contributor.authorKelly, Niall P.
dc.contributor.authorCaro, Ludovic
dc.contributor.authorDernaika, Mohamad
dc.contributor.authorShayesteh, Maryam
dc.contributor.authorAlexander, Justin K.
dc.contributor.authorYang, Hua
dc.contributor.authorMorrissey, Padraic E.
dc.contributor.authorGocalińska, Agnieszka M.
dc.contributor.authorThomas, Kevin K.
dc.contributor.authorPelucchi, Emanuele
dc.contributor.authorPeters, Frank H.
dc.date.accessioned2017-05-19T09:03:59Z
dc.date.available2017-05-19T09:03:59Z
dc.date.issued2017
dc.date.updated2017-05-19T08:50:11Z
dc.description.statusNot peer revieweden
dc.description.urihttps://www.ecio-conference.org/en
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationDuggan, S. P., Kelly, N. P., Caro, L., Dernaika, M., Shayesteh, M., Alexander, J. K., Yang, H., Morrissey, P. E., Gocalinska, A., Thomas, K. K., Pelucchi, E., Peters, F. H. (2017) ‘Development of inverted p-substrate InP/AlGaInAs lasers for vertical integration with multiple passive or active intrinsic regions’, Proceedings of the European Conference on Integrated Optics 2017, Eindhoven, the Netherlands, 3-5 April.en
dc.identifier.endpage2en
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/3998
dc.language.isoenen
dc.publisherEuropean Conference on Integrated Opticsen
dc.relation.ispartofEuropean Conference on Integrated Optics 2017
dc.relation.urihttps://www.ecio-conference.org/ecio-2017-papers/
dc.rights© 2017, the Authors.en
dc.subjectZn dopanten
dc.subjectZn diffusionen
dc.subjectCarbon doped layeren
dc.titleDevelopment of inverted p-substrate InP/AlGaInAs lasers for vertical integration with multiple passive or active intrinsic regionsen
dc.typeConference itemen
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