Access to this item is restricted until 12 months after publication by the request of the publisher.. Restriction lift date: 2017-10-18
Investigating routes toward atomic layer deposition of silicon carbide: Ab initio screening of potential silicon and carbon precursors
| dc.check.date | 2017-10-18 | |
| dc.check.info | Access to this item is restricted until 12 months after publication by the request of the publisher. | en |
| dc.contributor.author | Filatova, Ekaterina A. | |
| dc.contributor.author | Hausmann, Dennis | |
| dc.contributor.author | Elliott, Simon D. | |
| dc.contributor.funder | Lam Research Corporation, United States | en |
| dc.date.accessioned | 2016-11-03T10:22:17Z | |
| dc.date.available | 2016-11-03T10:22:17Z | |
| dc.date.issued | 2016-10-18 | |
| dc.date.updated | 2016-11-03T10:02:31Z | |
| dc.description.abstract | Silicon carbide (SiC) is a promising material for electronics due to its hardness, and ability to carry high currents and high operating temperature. SiC films are currently deposited using chemical vapor deposition (CVD) at high temperatures 1500–1600 °C. However, there is a need to deposit SiC-based films on the surface of high aspect ratio features at low temperatures. One of the most precise thin film deposition techniques on high-aspect-ratio surfaces that operates at low temperatures is atomic layer deposition (ALD). However, there are currently no known methods for ALD of SiC. Herein, the authors present a first-principles thermodynamic analysis so as to screen different precursor combinations for SiC thin films. The authors do this by calculating the Gibbs energy ΔGΔG of the reaction using density functional theory and including the effects of pressure and temperature. This theoretical model was validated for existing chemical reactions in CVD of SiC at 1000 °C. The precursors disilane (Si2H6), silane (SiH4), or monochlorosilane (SiH3Cl) with ethyne (C2H2), carbontetrachloride (CCl4), or trichloromethane (CHCl3) were predicted to be the most promising for ALD of SiC at 400 °C. | en |
| dc.description.status | Peer reviewed | en |
| dc.description.version | Published Version | en |
| dc.format.mimetype | application/pdf | en |
| dc.identifier.citation | Filatova, Ekaterina A; Hausmann, Dennis; Elliott, Simon D. (2017) 'Investigating routes toward atomic layer deposition of silicon carbide: Ab initio screening of potential silicon and carbon precursors'. Journal of Vacuum Science & Technology A, 35 (11):01B103-1-01B103-6. doi: 10.1116/1.4964890 | en |
| dc.identifier.doi | 10.1116/1.4964890 | |
| dc.identifier.endpage | 01B103-6 | en |
| dc.identifier.issn | 0734-2101 | |
| dc.identifier.issued | 11 | en |
| dc.identifier.journaltitle | Journal of Vacuum Science & Technology A | en |
| dc.identifier.startpage | 01B103-1 | en |
| dc.identifier.uri | https://hdl.handle.net/10468/3235 | |
| dc.identifier.volume | 35 | en |
| dc.language.iso | en | en |
| dc.publisher | AIP Publishing | en |
| dc.rights | © 2016 American Vacuum Society; AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in J. Vac. Sci. Technol. A 35(1), Jan/Feb 2017 and may be found at http://scitation.aip.org/content/avs/journal/jvsta/35/1/10.1116/1.4964890. | en |
| dc.subject | Free energy | en |
| dc.subject | Wide band gap semiconductors | en |
| dc.subject | Atomic layer deposition | en |
| dc.subject | Density functional theory | en |
| dc.subject | Semiconductor growth | en |
| dc.subject | Silicon compounds | en |
| dc.subject | Ab initio calculations | en |
| dc.subject | Semiconductor thin films | en |
| dc.title | Investigating routes toward atomic layer deposition of silicon carbide: Ab initio screening of potential silicon and carbon precursors | en |
| dc.type | Article (peer-reviewed) | en |
