Graphene field effect transistor on silicon nitride devices for near-infrared wavelength tuning
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Date
2024
Authors
Vorobev, Artem S.
Mendoza-Castro, J. H.
Iadanza, S.
Jastan, S.
Bianco, G. V.
Bruno, G.
D’Orazio, A.
O’Faolain, Liam
Grande, M.
Journal Title
Journal ISSN
Volume Title
Publisher
Optica Publishing Group
Published Version
Abstract
In this work, we present the Graphene Field Effect Transistor (GFET) on Silicon Nitride waveguides for achieving the wavelength tuning in the Near-Infrared (NIR) range. The obtained Electrolyte-Graphene-Waveguide fabrication and characterization results are demonstrated.
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Keywords
Graphene field effect transistor (GFET) , Silicon nitride , Near-infrared (NIR)
Citation
Vorobev, A. S., Mendoza-Castro, J. H., Iadanza, S., Jastan, S., Bianco, G. V., Bruno, G., D’Orazio, A., O’Faolain, L. and Grande, M. (2024) 'Graphene field effect transistor on silicon nitride devices for near-infrared wavelength tuning', CLEO 2024, Charlotte, North Carolina, United States, 5-10 May 2024. Technical Digest Series (Optica Publishing Group, 2024), paper AM2J.2 (2pp). https://doi.org/10.1364/CLEO_AT.2024.AM2J.2
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© 2024, the Authors. Published by Optica Publishing Group.