Electrical characterisation of InGaAs on insulator structures

Simple item page
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorGomeniuk, Y. Y.
dc.contributor.authorDaix, N.
dc.contributor.authorO'Brien, J.
dc.contributor.authorBlake, A.
dc.contributor.authorThomas, K. K.
dc.contributor.authorPelucchi, Emanuele
dc.contributor.authorO'Connell, D.
dc.contributor.authorSheehan, Brendan
dc.contributor.authorMonaghan, Scott
dc.contributor.authorCaimi, D.
dc.contributor.authorCzornomaz, L.
dc.contributor.authorUccelli, E.
dc.contributor.authorHurley, Paul K.
dc.contributor.funderSeventh Framework Programmeen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2022-06-28T11:44:17Z
dc.date.available2022-06-28T11:44:17Z
dc.date.issued2015-04-16
dc.date.updated2022-06-27T10:45:21Z
dc.description.abstractThe electrical properties of Au/Ni/In0.53Ga0.47As/Al2O3/SiO2/Si structures were investigated using capacitance voltage (C–V) analysis. The properties of the InGaAs on insulator structures were analysed by comparing the measured and the theoretical C–Vs obtained using a physics based simulation of this structure. The results show that the measured data obtained on both n-type and p-type silicon match very well the simulated data. This work also shows that this approach allows the characterisation of charges in the buried oxide as well as interface states at the bottom InGaAs/Al2O3 interface.en
dc.description.sponsorshipScience Foundation Ireland (SFI/09/IN.1/I2633)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationCherkaoui, K., Gomeniuk, Y. Y., Daix, N., O’Brien, J., Blake, A., Thomas, K. K., Pelucchi, E., O’Connell, D., Sheehan, B., Monaghan, S., Caimi, D., Czornomaz, L., Uccelli, E. and Hurley, Paul K. (2015) 'Electrical characterisation of InGaAs on insulator structures', Microelectronic Engineering, 147, pp. 63-66. doi: 10.1016/j.mee.2015.04.077en
dc.identifier.doi10.1016/j.mee.2015.04.077en
dc.identifier.endpage66en
dc.identifier.issn0167-9317
dc.identifier.journaltitleMicroelectronic Engineeringen
dc.identifier.startpage63en
dc.identifier.urihttps://hdl.handle.net/10468/13322
dc.identifier.volume147en
dc.language.isoenen
dc.publisherElsevier B.V.en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/619325/EU/Compound Semiconductors for 3D integration/COMPOSE3en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/09/IN.1/I2633/IE/Investigating Emerging Non-Silicon Transistors (INVENT)/en
dc.rights© 2015, Elsevier B.V. All rights reserved. This manuscript version is made available under the CC BY-NC-ND 4.0 license.en
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/4.0/en
dc.subjectInGaAsen
dc.subject3D integrationen
dc.subjectInterlayer dielectricen
dc.titleElectrical characterisation of InGaAs on insulator structuresen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Chekaoui_INFOS_2015_Final.pdf
Size:
519.18 KB
Format:
Adobe Portable Document Format
Description:
Accepted Version
Download
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
2.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Tyndall National Institute - Journal Articles