Polar (In,Ga)N/GaN quantum wells: Revisiting the impact of carrier localization on the "green gap" problem

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dc.contributor.authorTanner, Daniel S. P.
dc.contributor.authorDawson, Philip
dc.contributor.authorKappers, Menno J.
dc.contributor.authorOliver, Rachel A.
dc.contributor.authorSchulz, Stefan
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderSustainable Energy Authority of Irelanden
dc.contributor.funderEngineering and Physical Sciences Research Councilen
dc.date.accessioned2020-11-23T15:54:01Z
dc.date.available2020-11-23T15:54:01Z
dc.date.issued2020-04-27
dc.date.updated2020-11-23T15:31:47Z
dc.description.abstractWe present a detailed theoretical analysis of the electronic and optical properties of c-plane InGaN/GaN quantum-well structures with In contents ranging from 5% to 25%. Special attention is paid to the relevance of alloy-induced carrier-localization effects to the "green gap" problem. Studying the localization length and electron-hole overlaps at low and elevated temperatures, we find alloy-induced localization effects are crucial for the accurate description of (In,Ga)N quantum wells across the range of In content studied. However, our calculations show very little change in the localization effects when moving from the blue to the green spectral regime; that is, when the internal quantum efficiency and wall-plug efficiencies reduce sharply, for instance, the in-plane carrier separation due to alloy-induced localization effects changes weakly. We conclude that other effects, such as increased defect densities, are more likely to be the main reason for the green-gap problem. This conclusion is further supported by our finding that the electron localization length is large, when compared with that of holes, and changes little in the In composition range of interest for the green-gap problem. Thus, electrons may become increasingly susceptible to an increased (point) defect density in green emitters and as a consequence the nonradiative-recombination rate may increase.en
dc.description.sponsorshipScience Foundation Ireland (17/CDA/4789); Engineering and Physical Sciences Research Council (Grant No. EP/M010589/1)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid044068en
dc.identifier.citationTanner, D. S. P., Dawson, P., Kappers, M. J., Oliver, R. A. and Schulz, S. (2020) 'Polar (In,Ga)N/GaN quantum wells: Revisiting the impact of carrier localization on the "green gap" problem', Physical Review Applied, 13, 044068 (19pp). doi: 10.1103/PhysRevApplied.13.044068en
dc.identifier.doi10.1103/PhysRevApplied.13.044068en
dc.identifier.endpage19en
dc.identifier.issn2331-7019
dc.identifier.journaltitlePhysical Review Applieden
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/10781
dc.identifier.volume13en
dc.language.isoenen
dc.publisherAmerican Physical Societyen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/13/SIRG/2210/IE/Shaping the electronic and optical properties of non- and semi-polar nitride-based semiconductor nanostructures/en
dc.rights© 2020, American Physical Society.en
dc.subjectTime-resolved photoluminescenceen
dc.subjectLight-emitting diodesen
dc.subjectLaser diodesen
dc.subjectInGaNen
dc.subjectFluctuationsen
dc.subjectElectronen
dc.subjectNonpolaren
dc.subjectBlueen
dc.subjectEmissionen
dc.subjectLifetimeen
dc.titlePolar (In,Ga)N/GaN quantum wells: Revisiting the impact of carrier localization on the "green gap" problemen
dc.typeArticle (peer-reviewed)en
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