Atomistic analysis of radiative recombination rate, Stokes shift, and density of states in c-plane InGaN/GaN quantum wells

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dc.contributor.authorMcMahon, Joshua M.
dc.contributor.authorTanner, Daniel S. P.
dc.contributor.authorKioupakis, Emmanouil
dc.contributor.authorSchulz, Stefan
dc.contributor.funderSustainable Energy Authority of Irelanden
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderUniversity of Michiganen
dc.date.accessioned2020-05-13T11:30:45Z
dc.date.available2020-05-13T11:30:45Z
dc.date.issued2020-05-07
dc.date.updated2020-05-13T09:04:38Z
dc.description.abstractRecent experimental studies have revealed an unusual temperature dependence of the radiative recombination rate in polar InGaN/GaN quantum wells. We show, by direct atomistic evaluation of the radiative recombination rate, that the experimentally observed trend of an increasing rate with increasing temperature results from the population of energetically higher lying electron and hole states with dipole matrix elements larger than those of the band edge states relevant to low temperature studies. Given that the overall evolution of this recombination rate is tightly linked to the energetic distribution of localized states, we investigate the hole density of states and absorption spectra. Based on the calculated absorption spectra, Stokes shift energies are extracted for InGaN quantum wells with In contents ranging from 5% to 25%. Here, good agreement with experimental literature results is found. We provide also hole tail state characteristic energies as a function of the In content, a quantity that indicates the localization character of the ensemble of hole states and which serves often as a key component in modified continuum-based models to capture carrier localization effects in transport or optical gain calculations.en
dc.description.sponsorshipScience Foundation Ireland (Grant No. 17/CDA/4789); University of Michigan (Blue Sky Research Program)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid181104en
dc.identifier.citationMcMahon, J. M., Tanner, D. S. P., Kioupakis, E. and Schulz, S. (2020) 'Atomistic analysis of radiative recombination rate, Stokes shift, and density of states in c-plane InGaN/GaN quantum wells', Applied Physics Letters, 116(18), 181104 (5pp). doi: 10.1063/5.0006128en
dc.identifier.doi10.1063/5.0006128en
dc.identifier.eissn1077-3118
dc.identifier.endpage5en
dc.identifier.issn0003-6951
dc.identifier.issued18en
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/9946
dc.identifier.volume116en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.rights© 2020, the Authors. Published under license by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared as: McMahon, J. M., Tanner, D. S. P., Kioupakis, E. and Schulz, S. (2020) 'Atomistic analysis of radiative recombination rate, Stokes shift, and density of states in c-plane InGaN/GaN quantum wells', Applied Physics Letters, 116(18), 181104 (5pp), doi: 10.1063/5.0006128, and may be found at https://doi.org/10.1063/5.0006128en
dc.subjectTransport or optical gain calculationsen
dc.subjectPolar InGaN/GaN quantum wellsen
dc.subjectRadiative recombination rateen
dc.titleAtomistic analysis of radiative recombination rate, Stokes shift, and density of states in c-plane InGaN/GaN quantum wellsen
dc.typeArticle (peer-reviewed)en
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