Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors

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dc.contributor.authorMiranda, Enrique
dc.contributor.authorJiménez, David
dc.contributor.authorSuñé, Jordi
dc.contributor.authorO'Connor, Éamon
dc.contributor.authorMonaghan, Scott
dc.contributor.authorPovey, Ian M.
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorHurley, Paul K.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderMinisterio de Ciencia y Tecnología, Spainen
dc.contributor.funderDepartament d'Universitats, Recerca i Societat de la Informació de la Generalitat de Catalunya, Spaines
dc.date.accessioned2014-09-03T13:52:20Z
dc.date.available2014-09-03T13:52:20Z
dc.date.issued2013
dc.date.updated2013-03-01T11:40:12Z
dc.description.abstractFilamentary leakage current paths can occur in circular area Pt/HfO2/Pt capacitors as the result of severe electrical stress. The spatial distribution of these paths is investigated using 2D statistical methods. The filamentary paths are associated with important thermal effects occurring inside the HfO2 layer and manifest externally as a random spot pattern on the top Pt electrode. It is shown in this paper that for the devices with the largest areas significant departures from homogeneity are detected close to the peripheries of the structures. These deviations are observed as a lower density of spots than expected for a homogeneous Poisson process. Although the ultimate reason for this anomaly is still under investigation, our results demonstrate that the complete spatial randomness frequently assumed in oxide reliability analysis should not be taken for granted.en
dc.description.sponsorshipScience Foundation Ireland (09/IN.1/I2633 INVENT); Ministerio de Ciencia y Tecnología, Spain (TEC2009-09350 (partially funded by the European Union FEDER program)); Departament d'Universitats, Recerca i Societat de la Informació de la Generalitat de Catalunya, Spain (2009SGR783)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationMIRANDA, E., JIMENEZ, D., SUNE, J., O'CONNOR, E., MONAGHAN, S., POVEY, I., CHERKAOUI, K. & HURLEY, P. K. 2013. Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO[sub 2]/Pt capacitors. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 31, 01A107-6. http://dx.doi.org/10.1116/1.4768681en
dc.identifier.doi10.1116/1.4768681
dc.identifier.issn1520-8567
dc.identifier.issn1071-1023
dc.identifier.issued1en
dc.identifier.journaltitleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structuresen
dc.identifier.startpage01A107-6en
dc.identifier.urihttps://hdl.handle.net/10468/1647
dc.identifier.volume31en
dc.language.isoenen
dc.publisherAmerican Institute of Physics / American Vacuum Societyen
dc.relation.ispartof17th Workshop on Dielectrics in Microelectronics 2012 (WoDiM)
dc.rights© 2013 American Vacuum Society. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Vacuum Society. The following article appeared in MIRANDA, E., JIMENEZ, D., SUNE, J., O'CONNOR, E., MONAGHAN, S., POVEY, I., CHERKAOUI, K. & HURLEY, P. K. 2013. Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO[sub 2]/Pt capacitors. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 31, 01A107-6. and may be found at http://dx.doi.org/10.1116/1.4768681en
dc.subjectCapacitorsen
dc.subjectElectrodesen
dc.subjectHafnium compoundsen
dc.subjectLeakage currentsen
dc.subjectPlatinumen
dc.subjectReliabilityen
dc.subjectStatistical analysisen
dc.subjectStochastic processesen
dc.titleNonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitorsen
dc.typeArticle (peer-reviewed)en
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