Epitaxial post-implant recrystallization in germanium nanowires

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dc.contributor.authorKelly, Róisín A.
dc.contributor.authorLiedke, Bartosz
dc.contributor.authorBaldauf, Stefan
dc.contributor.authorGangnaik, Anushka S.
dc.contributor.authorBiswas, Subhajit
dc.contributor.authorGeorgiev, Yordan M.
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorPosselt, Matthias
dc.contributor.authorPetkov, Nikolay
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderDeutsche Forschungsgemeinschaften
dc.date.accessioned2018-08-03T14:25:31Z
dc.date.available2018-08-03T14:25:31Z
dc.date.issued2015-08-14
dc.date.updated2018-08-02T18:56:27Z
dc.description.abstractAs transistor dimensions continue to diminish, techniques for fabrication need to be adapted. In particular, crystal recovery post ion implantation is required due to destructive ion bombardment inducing crystal damage including amorphization. Here, we report a study on the post-implant recrystallization in germanium (Ge) nanowires (NWs) following gallium (Ga) ion doping. In this work a variation of NW diameters and orientations were irradiated and annealed in situ to investigate the mechanism of recrystallization. An added complication of misorientation of crystal grains increases the complexity of crystal recovery for suspended NWs. We show that when the misorientation is prevented, by leaving a crystal link between two seeds and providing a rigid support, recrystallization occurs primarily via solid phase epitaxial growth (SPEG). Finally, we demonstrate that top-down fabricated Ge NWs on insulator can be recovered with no extended defects. This work highlights both experimentally and through molecular dynamic simulations the importance of engineering crystal recovery in Ge NWs which may have potential for next-generation complementary metal-oxide semiconductor (CMOS) devices.en
dc.description.sponsorshipDeutsche Forschungsgemeinschaft (Grant No. BR 1520/14-1)en
dc.description.statusPeer revieweden
dc.description.versionSubmitted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationKelly, R. A., Liedke, B., Baldauf, S., Gangnaik, A., Biswas, S., Georgiev, Y., Holmes, J. D., Posselt, M. and Petkov, N. (2015) 'Epitaxial Post-Implant Recrystallization in Germanium Nanowires', Crystal Growth & Design, 15(9), pp. 4581-4590. doi: 10.1021/acs.cgd.5b00836en
dc.identifier.doi10.1021/acs.cgd.5b00836
dc.identifier.endpage4590en
dc.identifier.issn1528-7483
dc.identifier.issued9en
dc.identifier.journaltitleCrystal Growth and Designen
dc.identifier.startpage4581en
dc.identifier.urihttps://hdl.handle.net/10468/6577
dc.identifier.volume15en
dc.language.isoenen
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/09/SIRG/I1623/IE/N-type doping in germanium for sub-20nm technology CMOS devices/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Principal Investigator Programme (PI)/09/IN.1/I2602/IE/Novel Nanowire Structures for Devices/en
dc.relation.urihttp://pubs.acs.org/journal/cgdefu
dc.rights© 2015 American Chemical Society. This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in Crystal Growth & Design, copyright © American Chemical Society after peer review. To access the final edited and published work see https://pubs.acs.org/doi/10.1021/acs.cgd.5b00836en
dc.subjectGermaniumen
dc.subjectIon bombardmenten
dc.subjectIon implantationen
dc.subjectMetalsen
dc.subjectMolecular dynamicsen
dc.subjectMOS devicesen
dc.subjectNanowiresen
dc.subjectNeural prosthesesen
dc.subjectRecoveryen
dc.subjectRecrystallization (metallurgy)en
dc.subjectSemiconductor devicesen
dc.subjectSemiconductor dopingen
dc.subjectComplementary metal oxide semiconductorsen
dc.subjectCrystal recoveryen
dc.subjectExtended defecten
dc.subjectGermanium nanowiresen
dc.subjectGermaniums (Ge)en
dc.subjectMis-orientationen
dc.subjectNanowires (NWs)en
dc.subjectSolid phase epitaxial growthen
dc.subjectRecrystallizationen
dc.subjectGermaniumen
dc.subjectNanowireen
dc.subjectIon irradiationen
dc.subjectDefecten
dc.titleEpitaxial post-implant recrystallization in germanium nanowiresen
dc.typeArticle (peer-reviewed)en
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