Molecular dynamics simulation of the regrowth of nanometric multigate Si devices

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dc.contributor.authorMarques, Luis A.
dc.contributor.authorPelaz, Lourdes
dc.contributor.authorSantos, Ivan
dc.contributor.authorLopez, Pedro
dc.contributor.authorDuffy, Ray
dc.contributor.funderMinisterio de Ciencia e Innovación
dc.date.accessioned2017-09-20T10:06:34Z
dc.date.available2017-09-20T10:06:34Z
dc.date.issued2012
dc.description.abstractWe use molecular dynamics (MD) simulation techniques to study the regrowth of nanometric multigate Si devices, such as fins and nanowires, surrounded by free surfaces and interfaces with amorphous material. Our results indicate that atoms in amorphous regions close to lateral free surfaces or interfaces rearrange at a slower rate compared to those in bulk due to the discontinuity of the lateral crystalline template. Consequently, the recrystallization front which advances faster in the device center than at the interfaces adopts new orientations. Regrowth then proceeds depending on the particular orientation of the new amorphous/crystal interfaces. In the particular case of (110) oriented fins, the new amorphous/crystal interfaces are aligned along the (111) direction, which produces frequent twining during further regrowth. Based on our simulation results, we propose alternatives to overcome this defected recrystallization in multigate structures: device orientation along (100) to prevent the formation of limiting {111} I amorphous/crystal interfaces and presence of a crystalline seed along the device body to favor regrowth perpendicular to the lateral surfaces/interfaces rather than parallel to them. (C) 2012 American Institute of Physics. [doi :10.1063/1.3679126]en
dc.description.sponsorshipMinisterio de Ciencia e Innovación [TEC2008-06069]en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid34302
dc.identifier.citationMarqués, L. A., Pelaz, L., Santos, I., López, P. and Duffy, R. (2012) 'Molecular dynamics simulation of the regrowth of nanometric multigate Si devices', Journal of Applied Physics, 111(3), 034302 (6pp). doi: 10.1063/1.3679126en
dc.identifier.doi10.1063/1.3679126
dc.identifier.endpage6
dc.identifier.issn0021-8979
dc.identifier.issued3
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4732
dc.identifier.volume111
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/10.1063/1.3679126
dc.rights© 2012, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Marqués, L. A., Pelaz, L., Santos, I., López, P. and Duffy, R. (2012) 'Molecular dynamics simulation of the regrowth of nanometric multigate Si devices', Journal of Applied Physics, 111(3), 034302 (6pp). doi: 10.1063/1.3679126 and may be found at http://aip.scitation.org/doi/10.1063/1.3679126en
dc.subjectRecrystallizationen
dc.subjectCrystal defectsen
dc.subjectInterface structureen
dc.subjectNanowiresen
dc.subjectAnnealingen
dc.titleMolecular dynamics simulation of the regrowth of nanometric multigate Si devicesen
dc.typeArticle (peer-reviewed)en
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