Effects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers

Simple item page
dc.contributor.authorMiranda, Enrique
dc.contributor.authorO'Connor, Éamon
dc.contributor.authorHughes, Gregory
dc.contributor.authorCasey, Patrick
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorMonaghan, Scott
dc.contributor.authorLong, Rathnait D.
dc.contributor.authorO'Connell, Dan
dc.contributor.authorHurley, Paul K.
dc.contributor.funderGeneralitat de Catalunyaen
dc.contributor.funderMinisterio de Ciencia y Tecnologíaen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2022-07-21T10:33:28Z
dc.date.available2022-07-21T10:33:28Z
dc.date.issued2009-01
dc.date.updated2022-07-19T20:55:09Z
dc.description.abstractThe post-breakdown (BD) current-voltage (I-V) characteristics in MgO/Si and MgO/InP stacks with metal gate were investigated. We show that both stacks exhibit the soft and hard BD conduction modes and that the magnitude of the post-BD currents depends statistically on the substrate material, being larger in the case of the InP samples. This is contrary to what happens with the current in the fresh devices, which irrespective of the InP surface treatment, is larger for the Si samples. A comparative analysis of the post-BD conduction characteristics and direct evidences of the localized thermal effects on the metal gate electrode of both structures are presented.en
dc.description.sponsorshipGeneralitat de Catalunya (BE-2007); Ministerio de Ciencia y Tecnología (project number TEC2006-13731-C02-01); Science Foundation Ireland (Walton Awards scheme 07/W.1/I1828; 05/IN/1751; National Access Program at the Tyndall National Institute)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationMiranda, E., O'Connor, E., Hughes, G., Casey, P., Cherkaoui, K., Monaghan, S., Long, R., O'Connell, D. and Hurley, P. (2009) 'Effects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers', ECS Transactions, 25(6), pp. 79-86. doi: 10.1149/1.3206608en
dc.identifier.doi10.1149/1.3206608en
dc.identifier.eissn1938-6737
dc.identifier.endpage86en
dc.identifier.issn1938-5862
dc.identifier.issued6en
dc.identifier.journaltitleECS Transactionsen
dc.identifier.startpage79en
dc.identifier.urihttps://hdl.handle.net/10468/13386
dc.identifier.volume25en
dc.language.isoenen
dc.publisherIOP Publishing Ltden
dc.rights© 2009, The Electrochemical Society.en
dc.subjectSemiconductor substrate materialen
dc.subjectPost-breakdown currenten
dc.subjectMgO dielectric layersen
dc.titleEffects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layersen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
ECS2009_EMiranda.pdf
Size:
450.32 KB
Format:
Adobe Portable Document Format
Description:
Accepted Version
Download
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
2.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Tyndall National Institute - Journal Articles