Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga2O3 semiconductor

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dc.check.date2020-07-15
dc.check.infoAccess to this article is restricted until 12 months after publication by request of the publisher.en
dc.contributor.authorChikoidze, Ekaterine
dc.contributor.authorSartel, Corinne
dc.contributor.authorMohamed, Hagar
dc.contributor.authorTchelidze, Tamar
dc.contributor.authorModreanu, Mircea
dc.contributor.authorVales-Castro, Carlo
dc.contributor.authorRubio, Carles
dc.contributor.authorArnold, Christophe
dc.contributor.authorSallet, Vincent
dc.contributor.authorDumont, Yves
dc.contributor.authorPerez-Tomas, Amador
dc.contributor.funderMinistry of Higher Education, Egypten
dc.contributor.funderAgencia Estatal de Investigaciónen
dc.contributor.funderEuropean Regional Development Funden
dc.contributor.funderGeneralitat de Catalunyaen
dc.date.accessioned2019-07-24T10:23:44Z
dc.date.available2019-07-24T10:23:44Z
dc.date.issued2019-07-15
dc.date.updated2019-07-24T08:33:12Z
dc.description.abstractWhile there are several n-type transparent semiconductor oxides (TSO) for optoelectronic applications (e.g. LEDs, solar cells or display TFTs), their required p-type counterparts oxides are known to be more challenging. For the time being, the n-type TSO with the largest bandgap (~5eV) is Ga2O3 that holds the promisse of extending the light transparency further into the deep ultraviolet. In this work, it is demonstrated that strongly compensated Ga2O3 is also the intrinsic (or native) p-type TSO with the largest bandgap for any reported p-type TSO (e.g. NiO, SnO, delafossites, oxychalcogenides). The achievement of hole mobility in excess of 10 cm2/Vs and (high temperature) free hole concentrations in the ~1017 cm-3 range challenges the current thinking about achieving p-type conductivity in Ga2O3 being “out of question”. The results presented in this paper therefore further clarify that p-type Ga2O3 is possible, although more research must be conducted to determine what are the real Ga2O3 prospects for solar blind bipolar optoelectronics and ultra-high power electronics based in p-n homojunctions.en
dc.description.sponsorshipMinistry of Higher Education, Egypt (Cultural Affairs and Missions Sector Fellowship); European Regional Development Fund (Contract ENE2015-74275-JIN); Generalitat de Catalunya (CERCA programme); Agencia Estatal de Investigación (Grant No. SEV-2017-0706)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationChikoidze, E., Sartel, C., Mohamed, H., Tchelidze, T., Modreanu, M., Vales-Castro, C., Rubio, C., Arnold, C., Sallet, V., Dumont, Y. and Perez-Tomas, A. (2019) 'Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga2O3 semiconductor', Journal of Materials Chemistry C. doi: 10.1039/C9TC02910Aen
dc.identifier.doi10.1039/C9TC02910Aen
dc.identifier.issn2050-7526
dc.identifier.journaltitleJournal of Materials Chemistry Cen
dc.identifier.urihttps://hdl.handle.net/10468/8245
dc.language.isoenen
dc.publisherRoyal Society of Chemistryen
dc.rights© 2019, the Authors. Publication rights licensed to the Royal Society of Chemistry. All rights reserved.en
dc.subjectp-type Ga2O3en
dc.subjectSolar blind bipolar optoelectronicsen
dc.subjectUltra-high power electronicsen
dc.subjectp-n homojunctionsen
dc.titleEnhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga2O3 semiconductoren
dc.typeArticle (peer-reviewed)en
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