Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm)

Simple item page
dc.contributor.authorUsman, Muhammad
dc.contributor.authorHeck, Susannah C.
dc.contributor.authorClarke, Edmund
dc.contributor.authorSpencer, Peter
dc.contributor.authorRyu, Hoon
dc.contributor.authorMurray, Ray
dc.contributor.authorKlimeck, Gerhard
dc.date.accessioned2017-09-20T10:06:34Z
dc.date.available2017-09-20T10:06:34Z
dc.date.issued2011
dc.description.abstractThe design of some optical devices, such as semiconductor optical amplifiers for telecommunication applications, requires polarization-insensitive optical emission at long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots (QDs) typically exhibit ground state optical emissions at wavelengths shorter than 1300 nm with highly polarization-sensitive characteristics, although this can be modified by the use of low growth rates, the incorporation of strain-reducing capping layers, or the growth of closely-stacked QD layers. Exploiting the strain interactions between closely stacked QD layers also affords greater freedom in the choice of growth conditions for the upper layers, so that both a significant extension in their emission wavelength and an improved polarization response can be achieved due to modification of the QD size, strain, and composition. In this paper, we investigate the polarization behavior of single and stacked QD layers using room temperature sub-lasing-threshold electroluminescence and photovoltage measurements, as well as atomistic modeling with the NEMO 3-D simulator. A reduction is observed in the ratio of the transverse electric ('TE) to transverse magnetic (TM) optical mode response for a GaAs-capped QD stack as compared to a single QD layer, but when the second layer of the two-layer stack is InGaAs-capped, an increase in the TE/TM ratio is observed, in contrast to recent reports for single QD layers. (C) 2011 American Institute of Physics. [doi:10.1063/1.3587167]en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid104510
dc.identifier.citationUsman, M., Heck, S., Clarke, E., Spencer, P., Ryu, H., Murray, R. and Klimeck, G. (2011) 'Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm)', Journal of Applied Physics, 109(10), 104510 (8pp). doi: 10.1063/1.3587167en
dc.identifier.doi10.1063/1.3587167
dc.identifier.endpage8
dc.identifier.issn0021-8979
dc.identifier.issued10
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4738
dc.identifier.volume109
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/10.1063/1.3587167
dc.rights© 2011, American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Usman, M., Heck, S., Clarke, E., Spencer, P., Ryu, H., Murray, R. and Klimeck, G. (2011) 'Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm)', Journal of Applied Physics, 109(10), 104510 (8pp). doi: 10.1063/1.3587167 and may be found at http://aip.scitation.org/doi/10.1063/1.3587167en
dc.subjectQuantum dotsen
dc.subjectPolarizationen
dc.subjectIII-V semiconductorsen
dc.subjectGround statesen
dc.subjectWave functionsen
dc.titleExperimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm)en
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
3089.pdf
Size:
2.89 MB
Format:
Adobe Portable Document Format
Description:
Published Version
Download
Collections
Tyndall National Institute - Journal Articles