Atomistic analysis of Auger recombination in c-plane (In,Ga)N/GaN quantum wells: Temperature-dependent competition between radiative and nonradiative recombination
McMahon, Joshua M.
American Physical Society
We present an atomistic theoretical study of the temperature dependence of the competition between Auger and radiative recombination in c-plane (In,Ga)N/GaN quantum wells with indium (In) contents of 10%, 15%, and 25%. The model accounts for random alloy fluctuations and the connected fluctuations in strain and built-in field. Our investigations reveal that the total Auger recombination rate exhibits a weak temperature dependence; at a temperature of 300 K and a carrier density of n3D=3.8×1018cm−3, we find total Auger coefficients in the range of ≈6×10−30cm6/s(10% In) to ≈3×10−31cm6/s (25% In), thus large enough to significantly impact the efficiency in (In,Ga)N systems. Our calculations show that the hole-hole-electron Auger rate dominates the total rate for the three In contents studied; however, the relative difference between the hole-hole-electron and electron-electron-hole contributions decreases as the In content is increased to 25%. Our studies provide further insight into the origin of the “thermal droop” (i.e., the decrease in internal quantum efficiency with increasing temperature at a fixed carrier density) in (In,Ga)N-based light-emitting diodes. We find that the ratio of radiative to nonradiative (Auger) recombination increases in the temperature range relevant to the thermal droop (≥300 K), suggesting that the competition between these processes is not driving this droop effect in c-plane (In,Ga)N/GaN quantum wells. This finding is in line with recent experimental studies.
Atomistic theoretical study , Temperature dependence , Competition , Auger recombination , C-plane (In,Ga)N/GaN quantum wells , Radiative , Indium (In) , Thermal droop , Nonradiative
McMahon, J. M., Kioupakis, E. and Schulz, S. (2022) 'Atomistic analysis of Auger recombination in c -plane (In,Ga)N/GaN quantum wells: Temperature-dependent competition between radiative and nonradiative recombination', Physical Review B, 105, 195307 (14pp). doi: 10.1103/PhysRevB.105.195307
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