Bandgap and refractive index estimates of InAlN and related nitrides across their full composition ranges

Alam, Shahab N.; Zubialevich, Vitaly Z.; Ghafary, Bijan; Parbrook, Peter J.

Bandgap and refractive index estimates of InAlN and related nitrides across their full composition ranges

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Files

s41598-020-73160-7.pdf(1.36 MB)

Published version

Date

2020-10-01

Authors

Alam, Shahab N.

Zubialevich, Vitaly Z.

Ghafary, Bijan

Parbrook, Peter J.

Publisher

Springer Nature

Published Version

10.1038/s41598-020-73160-7

Abstract

III-Nitride bandgap and refractive index data are of direct relevance for the design of (In, Ga, Al)N-based photonic and electronic devices. The bandgaps and bandgap bowing parameters of III-nitrides across the full composition range are reviewed with a special emphasis on InxAl1−xN, where less consensus was reached in the literature previously. Considering the available InAlN data, including those recently reported for low indium contents, empirical formulae for InAlN bandgap and bandgap bowing parameter are proposed. Applying the generalised bandgap data, the refractive index dispersion data available in the literature for III-N alloys is fitted using the Adachi model. For this purpose, a formalism involving a parabolic dependence of the Adachi parameters on the dimensionless bandgap ξEg=(Eg,AxB1−xN−Eg,BN)/(Eg,AN−Eg,BN) of the corresponding ternary alloys is used rather than one directly invoking the alloy composition.

Keywords

Distributed Bragg reflectors , Molecular beam epitaxy , Gap bowing parameter , Optical properties , Dielectric function , Plane gan , Films , Alxga1-xn , Growth , Inxga1-xn

Citation

Alam, S. N., Zubialevich, V. Z., Ghafary, B. and Parbrook, P. J. (2020) 'Bandgap and refractive index estimates of InAlN and related nitrides across their full composition ranges', Scientific Reports, 10(1) 16205 (9 pp). doi: 10.1038/s41598-020-73160-7