Selective sidewall wetting of polymer blocks in hydrogen silsesquioxane directed self-assembly of PS-b-PDMS

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dc.contributor.authorHobbs, Richard G.
dc.contributor.authorFarrell, Richard A.
dc.contributor.authorBolger, Ciara T.
dc.contributor.authorKelly, Róisín A.
dc.contributor.authorMorris, Michael A.
dc.contributor.authorPetkov, Nikolay
dc.contributor.authorHolmes, Justin D.
dc.contributor.funderIrish Research Council for Science, Engineering and Technologyen
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHigher Education Authorityen
dc.date.accessioned2018-09-12T11:25:29Z
dc.date.available2018-09-12T11:25:29Z
dc.date.issued2012-08-02
dc.date.updated2018-08-06T14:21:40Z
dc.description.abstractWe show the importance of sidewall chemistry for the graphoepitaxial alignment of PS-b-PDMS using prepatterns fabricated by electron beam lithography of hydrogen silsesquioxane (HSQ) and by deep ultraviolet (DUV) lithography on SiO2 thin films. Density multiplication of polystyrene-block-polydimethylsiloxane (PS-b-PDMS) within both prepatterns was achieved by using a room temperature dynamic solvent annealing environment. Selective tuning of PS and PDMS wetting on the HSQ template sidewalls was also achieved through careful functionalization of the template and substrate surface using either brush or a self-assembled trimethylsilyl monolayer. PDMS selectively wets HSQ sidewalls treated with a brush layer of PDMS, whiereas PS is found to selectively wet HSQ sidewalls treated with hexamethyldisilazane (HMDS) to produce a trimethylsilyl-terminated surface. The etch resistance of the aligned polymer was also evaluated to understand the implications of using block copolymer patterns which have high etch resistance, self-forming (PDMS) wetting layers at both interfaces. The results outlined in this work may have direct applications in nanolithography for continued device scaling toward the end-of-roadmap era.en
dc.description.sponsorshipScience Foundation Ireland (09/IN.1/602); Higher Education (HEA Authority Program for Research in Third Level Institutions (2007-2011) via the INSPIRE programme), (National Access Program (NAP) for access to electron beam lithography provided by Tyndall National Institute (NAP 148/248))en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationHobbs, R. G., Farrell, R. A., Bolger, C. T., Kelly, R. A., Morris, M. A., Petkov, N. and Holmes, J. D. (2012) 'Selective Sidewall Wetting of Polymer Blocks in Hydrogen Silsesquioxane Directed Self-Assembly of PS-b-PDMS', ACS Applied Materials & Interfaces, 4(9), pp. 4637-4642. doi: 10.1021/am301012pen
dc.identifier.doi10.1021/am301012p
dc.identifier.endpage4642en
dc.identifier.issn1944-8244
dc.identifier.journaltitleACS Applied Materials & Interfacesen
dc.identifier.startpage4637en
dc.identifier.urihttps://hdl.handle.net/10468/6758
dc.identifier.volume4en
dc.language.isoenen
dc.publisherAmerican Chemical Society (ACS)en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Centre for Science Engineering and Technology (CSET)/08/CE/I1432/IE/CSET CRANN: 2nd Term funding/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Starting Investigator Research Grant (SIRG)/09/SIRG/I1621/IE/Tuning surface and dopant properties of silicon and germanium nanowires for high performance nanowire-based field-effect transistors/en
dc.relation.urihttps://pubs.acs.org/doi/abs/10.1021/am301012p
dc.rights© 2012 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/am301012pen
dc.subjectBlock copolymeren
dc.subjectElectron beam lithographyen
dc.subjectHydrogen silsesquioxaneen
dc.subjectNanolithographyen
dc.subjectSurface functionalizationen
dc.subjectTemplated self-assemblyen
dc.titleSelective sidewall wetting of polymer blocks in hydrogen silsesquioxane directed self-assembly of PS-b-PDMSen
dc.typeArticle (peer-reviewed)en
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