Identification of the transient stress-induced leakage current in silicon dioxide films for use in microelectromechanical systems capacitive switches

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dc.contributor.authorRyan, Cormac
dc.contributor.authorOlszewski, Oskar Zbigniew
dc.contributor.authorHoulihan, Ruth
dc.contributor.authorO'Mahony, Conor
dc.contributor.authorBlake, Alan
dc.contributor.authorDuane, Russell
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderIrish Research Council for Science, Engineering and Technology
dc.contributor.funderEuropean Space Agency
dc.date.accessioned2017-07-25T14:16:22Z
dc.date.available2017-07-25T14:16:22Z
dc.date.issued2015
dc.description.abstractDielectric charging at low electric fields is characterized on radio-frequency microelectromechanical systems (RF MEMS) capacitive switches. The dielectric under investigation is silicon dioxide deposited by plasma enhanced chemical vapor deposition. The switch membrane is fabricated using a metal alloy which is shown to be mechanically robust. In the absence of mechanical degradation, these capacitive switches are appropriate test structures for the study of dielectric charging in MEMS devices. Monitoring the shift and recovery of device capacitance-voltage characteristics revealed the presence of a charging mechanism which takes place across the bottom metal-dielectric interface. Current measurements on metal-insulator-metal devices confirmed the presence of interfacial charging and discharging transient currents. The field-and temperature-dependence of these currents is the same as the well-known transient stress-induced leakage current (SILC) observed in flash memory devices. A simple model was created based on established transient SILC theory which accurately fits the measured data and reveals that charge exchange at the bottom metal-dielectric interface is responsible for charging currents and pull-in voltage changes in these MEMS devices. (C) 2015 AIP Publishing LLC.en
dc.description.sponsorshipScience Foundation Ireland (SFI 10/RFP/ECE2883); Irish Research Council for Science, Engineering and Technology and European Space Agency (ESA-IRCSET support under the NPI programme)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid172904
dc.identifier.citationRyan, C., Olszewski, Z., Houlihan, R., O'Mahony, C., Blake, A. and Duane, R. (2015) 'Identification of the transient stress-induced leakage current in silicon dioxide films for use in microelectromechanical systems capacitive switches', Applied Physics Letters, 106(17), pp. 172904. doi: 10.1063/1.4919718en
dc.identifier.doi10.1063/1.4919718
dc.identifier.endpage5
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued17
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4251
dc.identifier.volume106
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.4919718
dc.rights© 2015 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Ryan, C., Olszewski, Z., Houlihan, R., O'Mahony, C., Blake, A. and Duane, R. (2015) 'Identification of the transient stress-induced leakage current in silicon dioxide films for use in microelectromechanical systems capacitive switches', Applied Physics Letters, 106(17), pp. 172904 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4919718en
dc.subjectOxide trapsen
dc.subjectMemsen
dc.subjectDependenceen
dc.subjectMicroelectromechanical systemsen
dc.subjectCharged currentsen
dc.subjectDielectric devicesen
dc.subjectDielectric thin filmsen
dc.subjectCharge exchange reactionsen
dc.titleIdentification of the transient stress-induced leakage current in silicon dioxide films for use in microelectromechanical systems capacitive switchesen
dc.typeArticle (peer-reviewed)en
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