Delay induced high order locking effects in semiconductor lasers

dc.contributor.authorKelleher, Bryan
dc.contributor.authorWishon, M. J.
dc.contributor.authorLocquet, A.
dc.contributor.authorGoulding, David
dc.contributor.authorTykalewicz, Boguslaw
dc.contributor.authorHuyet, Guillaume
dc.contributor.authorViktorov, E. A.
dc.date.accessioned2017-11-20T12:25:26Z
dc.date.available2017-11-20T12:25:26Z
dc.date.issued2017-11-09
dc.date.updated2017-11-20T12:09:18Z
dc.description.abstractMultiple time scales appear in many nonlinear dynamical systems. Semiconductor lasers, in particular, provide a fertile testing ground for multiple time scale dynamics. For solitary semiconductor lasers, the two fundamental time scales are the cavity repetition rate and the relaxation oscillation frequency which is a characteristic of the field-matter interaction in the cavity. Typically, these two time scales are of very different orders, and mutual resonances do not occur. Optical feedback endows the system with a third time scale: the external cavity repetition rate. This is typically much longer than the device cavity repetition rate and suggests the possibility of resonances with the relaxation oscillations. We show that for lasers with highly damped relaxation oscillations, such resonances can be obtained and lead to spontaneous mode-locking. Two different laser types—a quantum dot based device and a quantum well based device—are analysed experimentally yielding qualitatively identical dynamics. A rate equation model is also employed showing an excellent agreement with the experimental results.en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid114325
dc.identifier.citationKelleher, B., Wishon, M. J., Locquet, A., Goulding, D., Tykalewicz, B., Huyet, G. and Viktorov, E. A. (2017) 'Delay induced high order locking effects in semiconductor lasers', Chaos, 27, 114325 (9pp). doi:10.1063/1.4994029en
dc.identifier.doi10.1063/1.4994029
dc.identifier.endpage9en
dc.identifier.issn1054-1500
dc.identifier.issn1089-7682
dc.identifier.journaltitleChaosen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/5070
dc.identifier.volume27en
dc.language.isoenen
dc.publisherAIP Publishing
dc.rights© 2017, the Authors. Reproduced with the permission of AIP Publishing.en
dc.subjectSemiconductor laseren
dc.subjectCavity repetition rateen
dc.subjectSpontaneous mode-lockingen
dc.subjectQuantum doten
dc.subjectQuantum well devicesen
dc.subjectRelaxation oscillationsen
dc.subjectChemical reactionsen
dc.subjectRadiofrequency spectroscopyen
dc.subjectPhotodetectorsen
dc.titleDelay induced high order locking effects in semiconductor lasersen
dc.typeArticle (peer-reviewed)en
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