Lateral quantum-confined stark effect for integrated quantum dot electroabsorption modulators

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dc.contributor.authorMurphy, Tommyen
dc.contributor.authorBroderick, Christopher A.en
dc.contributor.authorPeters, Frank H.en
dc.contributor.authorO'Reilly, Eoin P.en
dc.contributor.funderTaighde Éireann - Research Irelanden
dc.contributor.funderRoyal Societyen
dc.date.accessioned2025-05-13T08:54:18Z
dc.date.available2025-05-13T08:54:18Z
dc.date.issued2025en
dc.description.abstractAdvances in III-V on Si quantum dot (QD) growth have enabled monolithic integration of high-performance electrically-pumped lasers on Si, as an enabling component for Si photonics. Another critical component is the electroabsorption modulator (EAM), which exploits the quantum-confined Stark effect (QCSE) to achieve high-speed modulation of laser signals. Conventional quantum well (QW) EAMs exploit a "vertical"QCSE via top and bottom electrical contacts. Rapid advancements in planar photonic integrated circuit technology motivate development of laterally-contacted EAMs, which offer benefits including reduced parasitic capacitance. The QCSE cannot be achieved via a lateral field in a QW, but can in a QD due to the three-dimensional carrier confinement. Here, theoretical analysis of the lateral-field QCSE in 1.3 μm InxGa1-xAs/GaAs QDs is undertaken. Comparing the QCSE produced by vertical and lateral electric fields for realistic QD morphology a robust lateral-field QCSE is demonstrated, with the optical absorption edge redshifting more rapidly vs. field strength than in a conventional QW-EAM. It is shown that lateral-field QD-EAM performance is expected to be strongly sensitive to the spectral linewidth of the band edge absorption, and can also depend upon the in-plane orientation of the lateral electric field. The impact of QD morphology - the base shape, aspect ratio and composition profile - is also quantified. It is demonstrated that InxGa1-xAs/GaAs QDs possessing high aspect ratios and low absorption linewidths are well-suited to develop lateral-field QD-EAMs. This suggests leveraging III-V on Si epitaxy to integrate EAMs with lasers or single-photon sources to realize high-speed Si photonic integrated circuits for applications in datacomms and linear optical quantum computing.en
dc.description.sponsorshipTaighde Éireann - Research Ireland (12/RC/2276_P2); Royal Society-Research Ireland (University Research Fellowship under Grant URF/R1/231340)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid1900310en
dc.identifier.citationMurphy, T., Broderick, C. A., Peters, F. H. and O'Reilly, E. P. (2025) 'Lateral quantum-confined stark effect for integrated quantum dot electroabsorption modulators', IEEE Journal of Selected Topics in Quantum Electronics, 31(5), 1900310 (10pp). https://doi.org/10.1109/JSTQE.2025.3552024en
dc.identifier.doi10.1109/JSTQE.2025.3552024en
dc.identifier.issn1077260Xen
dc.identifier.issued5
dc.identifier.journaltitleIEEE Journal of Selected Topics in Quantum Electronicsen
dc.identifier.urihttps://hdl.handle.net/10468/17434
dc.identifier.volume31
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en
dc.relation.project12/RC/2276_P2en
dc.rights© 2025, the Author(s). Open Access. This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see https://creativecommons.org/licenses/by/4.0/ en
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.subjectElectroabsorption modulators (EAMs)en
dc.subjectIntegrated photonicsen
dc.subjectQuantum dotsen
dc.subjectQuantum-confined Stark effect (QCSE)en
dc.subjectSilicon photonicsen
dc.titleLateral quantum-confined stark effect for integrated quantum dot electroabsorption modulatorsen
dc.typeArticle (peer reviewed)en
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