Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices

Simple item page
dc.contributor.authorO'Dwyer, Colm
dc.contributor.authorSzachowicz, Marta
dc.contributor.authorVisimberga, Giuseppe
dc.contributor.authorLavayen, Vladimir
dc.contributor.authorNewcomb, Simon B.
dc.contributor.authorSotomayor Torres, Clivia M.
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2016-07-01T14:28:06Z
dc.date.available2016-07-01T14:28:06Z
dc.date.issued2009-02-01
dc.date.updated2012-11-29T17:46:48Z
dc.description.abstractThin layers of indium tin oxide are widely used as transparent coatings and electrodes in solar energy cells, flat-panel displays, antireflection coatings, radiation protection and lithium-ion battery materials, because they have the characteristics of low resistivity, strong absorption at ultraviolet wavelengths, high transmission in the visible, high reflectivity in the far-infrared and strong attenuation in the microwave region. However, there is often a trade-off between electrical conductivity and transparency at visible wavelengths for indium tin oxide and other transparent conducting oxides. Here, we report the growth of layers of indium tin oxide nanowires that show optimum electronic and photonic properties and demonstrate their use as fully transparent top contacts in the visible to near-infrared region for light-emitting devices.en
dc.description.sponsorshipScience Foundation Ireland (SFI 02/IN.1/172); European Commission (EU Network of Excellence nanoPhotonics to Realise Molecular Scale Technologies, (PhOREMOST, FP6/2003/IST/2-511616); Programa Bicentenario de Cienca y Tecnologıa, Chile, (PCBT, ACT027); Conselho Nacional de Desenvolvimento Cientifico e Tecnologico (CNPq), Brazilen
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationO'Dwyer, C., Szachowicz, M., Visimberga, G., Lavayen, V., Newcomb, S. B. and Sotomayor Torres, C. M. (2009) 'Bottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devices', Nature Nanotechnology, 4, pp. 239-244. http://dx.doi.org/10.1038/nnano.2008.418en
dc.identifier.doi10.1038/nnano.2008.418
dc.identifier.endpage244en
dc.identifier.issn1748-3387
dc.identifier.journaltitleNature Nanotechnologyen
dc.identifier.startpage239en
dc.identifier.urihttps://hdl.handle.net/10468/2821
dc.identifier.volume4en
dc.language.isoenen
dc.publisherNature Publishing Groupen
dc.rights© 2009 Macmillan Publishers Limited. All rights reserved.en
dc.subjectNanotechnologyen
dc.subjectNanowiresen
dc.subjectIndium tin oxideen
dc.subjectElectron microscopyen
dc.subjectLight emitting diodeen
dc.titleBottom-up growth of fully transparent contact layers of indium tin oxide nanowires for light-emitting devicesen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
ITO_NWs-COD-nnano-accepted.pdf
Size:
743.37 KB
Format:
Adobe Portable Document Format
Description:
Accepted Version
Download
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
2.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Chemistry - Journal Articles
Tyndall National Institute - Journal Articles