Solution processed ZnO homogeneous quasisuperlattice materials

dc.check.date2018-11-01
dc.check.infoAccess to this article is restricted until 12 months after publication by request of the publisher.en
dc.contributor.authorBuckley, Darragh
dc.contributor.authorMcNulty, David
dc.contributor.authorZubialevich, Vitaly Z.
dc.contributor.authorParbrook, Peter J.
dc.contributor.authorO'Dwyer, Colm
dc.contributor.funderIrish Research Councilen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2018-01-08T15:14:32Z
dc.date.available2018-01-08T15:14:32Z
dc.date.issued2017-11
dc.date.updated2018-01-08T14:55:13Z
dc.description.abstractHeterogeneous multilayered oxide channel materials have enabled low temperature, high mobility thin film transistor technology by solution processing. The authors report the growth and characterization of solution-based, highly uniform and c-axis orientated zinc oxide (ZnO) single and multilayered thin films. Quasisuperlattice (QSL) metal oxide thin films are deposited by spin-coating and the structural, morphological, optical, electronic, and crystallographic properties are investigated. In this work, the authors show that uniform, coherent multilayers of ZnO can be produced from liquid precursors using an iterative coating-drying technique that shows epitaxial-like growth on SiO2, at a maximum temperature of 300 °C in air. As QSL films are grown with a greater number of constituent layers, the crystal growth direction changes from m-plane to c-plane, confirmed by x-ray and electron diffraction. The film surface is smooth for all QSLs with root mean square roughness <0.14 nm. X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) of electronic defects in the QSL structure show a dependence of defect emission on the QSL thickness, and PL mapping demonstrates that the defect signature is consistent across the QSL film in each case. XPS and valence-band analysis shown a remarkably consistent surface composition and electronic structure during the annealing process developed here.en
dc.description.sponsorshipIrish Research Council (Award No. GOIPG/2014/206);en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationBuckley, D., McNulty, D., Zubialevich, V., Parbrook, P. and O'Dwyer, C. (2017) 'Solution processed ZnO homogeneous quasisuperlattice materials', Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 35(6), 061517 (11pp). doi: 10.1116/1.5001758en
dc.identifier.doi10.1116/1.5001758
dc.identifier.endpage061517-11en
dc.identifier.issn0734-2101
dc.identifier.journaltitleJournal of Vacuum Science & Technology Aen
dc.identifier.startpage061517-1en
dc.identifier.urihttps://hdl.handle.net/10468/5242
dc.identifier.volume35en
dc.language.isoenen
dc.publisherAmerican Vacuum Societyen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Technology and Innovation Development Award (TIDA)/15/TIDA/2893/IE/Advanced Battery Materials for High Volumetric Energy Density Li-ion Batteries for Remote Off-Grid Power/en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/14/IA/2581/IE/Diffractive optics and photonic probes for efficient mouldable 3D printed battery skin materials for portable electronic devices/en
dc.relation.urihttp://avs.scitation.org/doi/10.1116/1.5001758
dc.rights© 2017, AIP Publishing. Published by the AVS. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Vacuum Science & Technology A: Vacuum, Surfaces and Films, Vol 35, 061517 (2017) and may be found at http://avs.scitation.org/doi/abs/10.1116/1.5001758en
dc.subjectSuperlatticesen
dc.subjectThin filmsen
dc.subjectBipolar transistorsen
dc.subjectSpray coatingen
dc.subjectLuminescence spectroscopyen
dc.titleSolution processed ZnO homogeneous quasisuperlattice materialsen
dc.typeArticle (peer-reviewed)en
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