Metal catalyzed porous n-type GaN layers: low resistivity ohmic contacting and single-step MgO/GaN diode formation

dc.contributor.authorBilousov, Oleksandr V.
dc.contributor.authorCarvajal, Joan J.
dc.contributor.authorDrouin, Dominique
dc.contributor.authorVilalta, A.
dc.contributor.authorRuterana, P.
dc.contributor.authorPujol, M. C.
dc.contributor.authorMateos, X.
dc.contributor.authorDiaz, Francesc
dc.contributor.authorAguilo, Magdalena
dc.contributor.authorO'Dwyer, Colm
dc.contributor.funderSeventh Framework Programmeen
dc.contributor.funderMinisterio de Economía y Competitividaden
dc.contributor.funderGeneralitat de Catalunyaen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2018-05-16T14:59:54Z
dc.date.available2018-05-16T14:59:54Z
dc.date.issued2013-04
dc.date.updated2018-05-15T23:17:41Z
dc.description.abstractPorous GaN crystals have been successfully grown and electrically contacted simultaneously on Pt- and Au-coated silicon substrates as porous crystals and as porous layers. By the direct reaction of metallic Ga and NH3 gas through chemical vapor deposition, intermetallic metal-Ga alloys form at the GaN-metal interface, allowing vapoursolid- solid seeding and subsequent growth of porous GaN. Currentvoltage and capacitance-voltage measurements confirm that the intermetallic seed layers prevent interface oxidation and give a highquality reduced workfunction contact that allows exceptionally low contact resistivity. Additionally, the simultaneous formation of a lower workfunction intermetallic permits ohmic electron transport to n-type GaN grown using high workfunction metals that best catalyze the formation of porous GaN layers and may be employed to seed and ohmically contact a range of III-N compounds and alloys for broadband absorption and emission. Additionally, we show how a porous GaN rectifying diode can be formed by oxidatively crystallizing Mg typically employed for p-doping GaN, as a layer formed under porous structure resulting in a high-k polycrystalline MgO dielectric.en
dc.description.sponsorshipMinisterio de Economía y Competitividad (the Spanish Government under Projects No. MAT2011-29255-C02-02, TEC2010-21574-C02-02, PI09/90527); Generalitat de Catalunya (Catalan Authority under Project No. 2009SGR235)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationBilousov, O. V., Carvajal, J. J., Drouin, D., Vilalta, A., Ruterana, P., Pujol, M. C., Mateos, X., Díaz, F., Aguiló, M. and O'Dwyer, C. (2013) 'Metal Catalyzed Porous n-type GaN Layers: Low Resistivity Ohmic Contacting and Single-Step MgO/GaN Diode Formation', ECS Transactions, 53(2), pp. 17-27. doi: 10.1149/05302.0017ecsten
dc.identifier.doi10.1149/05302.0017ecst
dc.identifier.endpage27en
dc.identifier.issn1938-5862
dc.identifier.issued2en
dc.identifier.journaltitleECS Transactionsen
dc.identifier.startpage17en
dc.identifier.urihttps://hdl.handle.net/10468/6132
dc.identifier.volume53en
dc.language.isoenen
dc.publisherElectrochemical Societyen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::SPA/263044/EU/Small debris removal by laser illumination and complementary technologie/CLEANSPACEen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Stokes Professorship & Lectureship Programme/07/SK/B1232a/IE/Colm ODwyer/en
dc.rights© 2013 ECS - The Electrochemical Societyen
dc.subjectGallium nitradeen
dc.subjectChemical vapor depositionen
dc.subjectEnergy gapen
dc.subjectGallium alloysen
dc.subjectMetalsen
dc.subjectPhase interfacesen
dc.subjectSemiconductor materialsen
dc.subjectVaporsen
dc.titleMetal catalyzed porous n-type GaN layers: low resistivity ohmic contacting and single-step MgO/GaN diode formationen
dc.typeArticle (peer-reviewed)en
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