Metal catalyzed porous n-type GaN layers: low resistivity ohmic contacting and single-step MgO/GaN diode formation

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dc.contributor.authorBilousov, Oleksandr V.
dc.contributor.authorCarvajal, Joan J.
dc.contributor.authorDrouin, Dominique
dc.contributor.authorVilalta, A.
dc.contributor.authorRuterana, P.
dc.contributor.authorPujol, M. C.
dc.contributor.authorMateos, X.
dc.contributor.authorDiaz, Francesc
dc.contributor.authorAguilo, Magdalena
dc.contributor.authorO'Dwyer, Colm
dc.contributor.funderSeventh Framework Programmeen
dc.contributor.funderMinisterio de Economía y Competitividaden
dc.contributor.funderGeneralitat de Catalunyaen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2018-05-16T14:59:54Z
dc.date.available2018-05-16T14:59:54Z
dc.date.issued2013-04
dc.date.updated2018-05-15T23:17:41Z
dc.description.abstractPorous GaN crystals have been successfully grown and electrically contacted simultaneously on Pt- and Au-coated silicon substrates as porous crystals and as porous layers. By the direct reaction of metallic Ga and NH3 gas through chemical vapor deposition, intermetallic metal-Ga alloys form at the GaN-metal interface, allowing vapoursolid- solid seeding and subsequent growth of porous GaN. Currentvoltage and capacitance-voltage measurements confirm that the intermetallic seed layers prevent interface oxidation and give a highquality reduced workfunction contact that allows exceptionally low contact resistivity. Additionally, the simultaneous formation of a lower workfunction intermetallic permits ohmic electron transport to n-type GaN grown using high workfunction metals that best catalyze the formation of porous GaN layers and may be employed to seed and ohmically contact a range of III-N compounds and alloys for broadband absorption and emission. Additionally, we show how a porous GaN rectifying diode can be formed by oxidatively crystallizing Mg typically employed for p-doping GaN, as a layer formed under porous structure resulting in a high-k polycrystalline MgO dielectric.en
dc.description.sponsorshipMinisterio de Economía y Competitividad (the Spanish Government under Projects No. MAT2011-29255-C02-02, TEC2010-21574-C02-02, PI09/90527); Generalitat de Catalunya (Catalan Authority under Project No. 2009SGR235)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationBilousov, O. V., Carvajal, J. J., Drouin, D., Vilalta, A., Ruterana, P., Pujol, M. C., Mateos, X., Díaz, F., Aguiló, M. and O'Dwyer, C. (2013) 'Metal Catalyzed Porous n-type GaN Layers: Low Resistivity Ohmic Contacting and Single-Step MgO/GaN Diode Formation', ECS Transactions, 53(2), pp. 17-27. doi: 10.1149/05302.0017ecsten
dc.identifier.doi10.1149/05302.0017ecst
dc.identifier.endpage27en
dc.identifier.issn1938-5862
dc.identifier.issued2en
dc.identifier.journaltitleECS Transactionsen
dc.identifier.startpage17en
dc.identifier.urihttps://hdl.handle.net/10468/6132
dc.identifier.volume53en
dc.language.isoenen
dc.publisherElectrochemical Societyen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::SPA/263044/EU/Small debris removal by laser illumination and complementary technologie/CLEANSPACEen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Stokes Professorship & Lectureship Programme/07/SK/B1232a/IE/Colm ODwyer/en
dc.rights© 2013 ECS - The Electrochemical Societyen
dc.subjectGallium nitradeen
dc.subjectChemical vapor depositionen
dc.subjectEnergy gapen
dc.subjectGallium alloysen
dc.subjectMetalsen
dc.subjectPhase interfacesen
dc.subjectSemiconductor materialsen
dc.subjectVaporsen
dc.titleMetal catalyzed porous n-type GaN layers: low resistivity ohmic contacting and single-step MgO/GaN diode formationen
dc.typeArticle (peer-reviewed)en
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