Metal catalyzed porous n-type GaN layers: low resistivity ohmic contacting and single-step MgO/GaN diode formation
dc.contributor.author | Bilousov, Oleksandr V. | |
dc.contributor.author | Carvajal, Joan J. | |
dc.contributor.author | Drouin, Dominique | |
dc.contributor.author | Vilalta, A. | |
dc.contributor.author | Ruterana, P. | |
dc.contributor.author | Pujol, M. C. | |
dc.contributor.author | Mateos, X. | |
dc.contributor.author | Diaz, Francesc | |
dc.contributor.author | Aguilo, Magdalena | |
dc.contributor.author | O'Dwyer, Colm | |
dc.contributor.funder | Seventh Framework Programme | en |
dc.contributor.funder | Ministerio de EconomÃa y Competitividad | en |
dc.contributor.funder | Generalitat de Catalunya | en |
dc.contributor.funder | Science Foundation Ireland | en |
dc.date.accessioned | 2018-05-16T14:59:54Z | |
dc.date.available | 2018-05-16T14:59:54Z | |
dc.date.issued | 2013-04 | |
dc.date.updated | 2018-05-15T23:17:41Z | |
dc.description.abstract | Porous GaN crystals have been successfully grown and electrically contacted simultaneously on Pt- and Au-coated silicon substrates as porous crystals and as porous layers. By the direct reaction of metallic Ga and NH3 gas through chemical vapor deposition, intermetallic metal-Ga alloys form at the GaN-metal interface, allowing vapoursolid- solid seeding and subsequent growth of porous GaN. Currentvoltage and capacitance-voltage measurements confirm that the intermetallic seed layers prevent interface oxidation and give a highquality reduced workfunction contact that allows exceptionally low contact resistivity. Additionally, the simultaneous formation of a lower workfunction intermetallic permits ohmic electron transport to n-type GaN grown using high workfunction metals that best catalyze the formation of porous GaN layers and may be employed to seed and ohmically contact a range of III-N compounds and alloys for broadband absorption and emission. Additionally, we show how a porous GaN rectifying diode can be formed by oxidatively crystallizing Mg typically employed for p-doping GaN, as a layer formed under porous structure resulting in a high-k polycrystalline MgO dielectric. | en |
dc.description.sponsorship | Ministerio de EconomÃa y Competitividad (the Spanish Government under Projects No. MAT2011-29255-C02-02, TEC2010-21574-C02-02, PI09/90527); Generalitat de Catalunya (Catalan Authority under Project No. 2009SGR235) | en |
dc.description.status | Peer reviewed | en |
dc.description.version | Accepted Version | en |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Bilousov, O. V., Carvajal, J. J., Drouin, D., Vilalta, A., Ruterana, P., Pujol, M. C., Mateos, X., DÃaz, F., Aguiló, M. and O'Dwyer, C. (2013) 'Metal Catalyzed Porous n-type GaN Layers: Low Resistivity Ohmic Contacting and Single-Step MgO/GaN Diode Formation', ECS Transactions, 53(2), pp. 17-27. doi: 10.1149/05302.0017ecst | en |
dc.identifier.doi | 10.1149/05302.0017ecst | |
dc.identifier.endpage | 27 | en |
dc.identifier.issn | 1938-5862 | |
dc.identifier.issued | 2 | en |
dc.identifier.journaltitle | ECS Transactions | en |
dc.identifier.startpage | 17 | en |
dc.identifier.uri | https://hdl.handle.net/10468/6132 | |
dc.identifier.volume | 53 | en |
dc.language.iso | en | en |
dc.publisher | Electrochemical Society | en |
dc.relation.project | info:eu-repo/grantAgreement/EC/FP7::SP1::SPA/263044/EU/Small debris removal by laser illumination and complementary technologie/CLEANSPACE | en |
dc.relation.project | info:eu-repo/grantAgreement/SFI/SFI Stokes Professorship & Lectureship Programme/07/SK/B1232a/IE/Colm ODwyer/ | en |
dc.rights | © 2013 ECS - The Electrochemical Society | en |
dc.subject | Gallium nitrade | en |
dc.subject | Chemical vapor deposition | en |
dc.subject | Energy gap | en |
dc.subject | Gallium alloys | en |
dc.subject | Metals | en |
dc.subject | Phase interfaces | en |
dc.subject | Semiconductor materials | en |
dc.subject | Vapors | en |
dc.title | Metal catalyzed porous n-type GaN layers: low resistivity ohmic contacting and single-step MgO/GaN diode formation | en |
dc.type | Article (peer-reviewed) | en |