Transparent all-oxide hybrid NiON/TiO2 heterostructure for optoelectronic applications

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dc.contributor.authorAivalioti, Chrysa
dc.contributor.authorPapadakis, Alexandros
dc.contributor.authorManidakis, Emmanouil
dc.contributor.authorKayambaki, Maria
dc.contributor.authorAndroulidaki, Maria
dc.contributor.authorTsagaraki, Katerina
dc.contributor.authorPelekanos, Nikolaos T.
dc.contributor.authorStoumpos, Constantinos
dc.contributor.authorModreanu, Mircea
dc.contributor.authorCrăciun, Gabriel
dc.contributor.authorRomanitan, Cosmin
dc.contributor.authorAperathitis, Elias
dc.contributor.funderEuropean Regional Development Funden
dc.date.accessioned2021-04-26T10:36:19Z
dc.date.available2021-04-26T10:36:19Z
dc.date.issued2021-04-21
dc.date.updated2021-04-26T10:24:14Z
dc.description.abstractNickel oxide (NiO) is a p-type oxide and nitrogen is one of the dopants used for modifying its properties. Until now, nitrogen-doped NiO has shown inferior optical and electrical properties than those of pure NiO. In this work, we present nitrogen-doped NiO (NiO:N) thin films with enhanced properties compared to those of the undoped NiO thin film. The NiO:N films were grown at room temperature by sputtering using a plasma containing 50% Ar and 50% (O2 + N2) gases. The undoped NiO film was oxygen-rich, single-phase cubic NiO, having a transmittance of less than 20%. Upon doping with nitrogen, the films became more transparent (around 65%), had a wide direct band gap (up to 3.67 eV) and showed clear evidence of indirect band gap, 2.50–2.72 eV, depending on %(O2-N2) in plasma. The changes in the properties of the films such as structural disorder, energy band gap, Urbach states and resistivity were correlated with the incorporation of nitrogen in their structure. The optimum NiO:N film was used to form a diode with spin-coated, mesoporous on top of a compact, TiO2 film. The hybrid NiO:N/TiO2 heterojunction was transparent showing good output characteristics, as deduced using both I-V and Cheung’s methods, which were further improved upon thermal treatment. Transparent NiO:N films can be realized for all-oxide flexible optoelectronic devices.en
dc.description.sponsorshipGreece and European Regional Development Fund (“Materials and Processes for Energy and Environment Applications-AENAO” (MIS 5002556) and “NANO ANDEM” (MIS 5029191))en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid988en
dc.identifier.citationAivalioti, C., Papadakis, A., Manidakis, E., Kayambaki, M., Androulidaki, M., Tsagaraki, K., Pelekanos, N. T., Stoumpos, C., Modreanu, M., Crăciun, G., Romanitan, C. and Aperathitis, E. (2021) 'Transparent All-Oxide Hybrid NiO:N/TiO2 Heterostructure for Optoelectronic Applications', Electronics, 10(9), 988 (18 pp). doi: 10.3390/electronics10090988en
dc.identifier.doi10.3390/electronics10090988en
dc.identifier.endpage18en
dc.identifier.issn2079-9292
dc.identifier.issued9en
dc.identifier.journaltitleElectronicsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/11222
dc.identifier.volume10en
dc.language.isoenen
dc.publisherMDPIen
dc.relation.urihttps://www.mdpi.com/2079-9292/10/9/988
dc.rights© 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).en
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en
dc.subjectNiOen
dc.subjectN-doped NiOen
dc.subjectUrbach tailen
dc.subjectSputteringen
dc.subjectMesoporous TiO2en
dc.subjectSpin-coatingen
dc.subjectNiO:N/TiO2 heterojunctionen
dc.subjectOptical propertiesen
dc.subjectDiode propertiesen
dc.titleTransparent all-oxide hybrid NiON/TiO2 heterostructure for optoelectronic applicationsen
dc.typeArticle (peer-reviewed)en
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