Monolayer doping of Si with improved oxidation resistance

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dc.contributor.authorO'Connell, John
dc.contributor.authorCollins, Gillian
dc.contributor.authorMcGlacken, Gerard P.
dc.contributor.authorDuffy, Ray
dc.contributor.authorHolmes, Justin D.
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2016-04-20T13:33:37Z
dc.date.available2016-04-20T13:33:37Z
dc.date.issued2016-01-26
dc.date.updated2016-04-01T16:21:11Z
dc.description.abstractIn this article, the functionalization of planar silicon with arsenic- and phosphorus-based azides was investigated. Covalently bonded and well-ordered alkyne-terminated monolayers were prepared from a range of commercially available dialkyne precursors using a well-known thermal hydrosilylation mechanism to form an acetylene-terminated monolayer. The terminal acetylene moieties were further functionalized through the application of copper-catalyzed azide–alkyne cycloaddition (CuAAC) reactions between dopant-containing azides and the terminal acetylene groups. The introduction of dopant molecules via this method does not require harsh conditions typically employed in traditional monolayer doping approaches, enabling greater surface coverage with improved resistance toward reoxidation. X-ray photoelectron spectroscopy studies showed successful dialkyne incorporation with minimal Si surface oxidation, and monitoring of the C 1s and N 1s core-level spectra showed successful azide–alkyne cycloaddition. Electrochemical capacitance–voltage measurements showed effective diffusion of the activated dopant atoms into the Si substrates.en
dc.description.sponsorshipScience Foundation Ireland (SFI Grant: 09/IN.1/I2602)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationO’CONNELL, J., COLLINS, G., MCGLACKEN, G. P., DUFFY, R. & HOLMES, J. D. 2016. Monolayer Doping of Si with Improved Oxidation Resistance. ACS Applied Materials & Interfaces, 8, 4101-4108. http://dx.doi.org/10.1021/acsami.5b11731en
dc.identifier.doi10.1021/acsami.5b11731
dc.identifier.endpage4108en
dc.identifier.issn1944-8244
dc.identifier.issued6en
dc.identifier.journaltitleACS applied materials & interfacesen
dc.identifier.startpage4101en
dc.identifier.urihttps://hdl.handle.net/10468/2465
dc.identifier.volume8en
dc.language.isoenen
dc.publisherAmerican Chemical Societyen
dc.relation.urihttp://pubs.acs.org/journal/aamick
dc.rights© 2016 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials and Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://dx.doi.org/10.1021/acsami.5b11731en
dc.subjectMonolayeren
dc.subjectDopingen
dc.subjectPhosphorusen
dc.subjectClick chemistryen
dc.subjectArsenicen
dc.subjectSiliconen
dc.subjectFunctionalizationen
dc.subjectHydrogen-terminated siliconen
dc.subjectGermanium nanowiresen
dc.subjectHydrosilylationen
dc.subjectPhotoemissionen
dc.subjectSpectroscopyen
dc.subjectAlkyne-azide cycloadditionen
dc.titleMonolayer doping of Si with improved oxidation resistanceen
dc.typeArticle (peer-reviewed)en
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