Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states

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dc.contributor.authorUskov, Alexander V.
dc.contributor.authorO'Reilly, Eoin P.
dc.contributor.authorMcPeake, Dermot
dc.contributor.authorLedentsov, Nikolai N.
dc.contributor.authorBimberg, D.
dc.contributor.authorHuyet, Guillaume
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderRussian Foundation for Basic Research
dc.contributor.funderInternational Association for the Promotion of Cooperation with Scientists from the Independent States of the Former Soviet Union (INTAS)
dc.contributor.funderFifth Framework Programme
dc.contributor.funderHigher Education Authority
dc.contributor.funderMinistry of Education and Science of the Russian Federation
dc.date.accessioned2017-07-28T13:29:54Z
dc.date.available2017-07-28T13:29:54Z
dc.date.issued2004
dc.description.abstractThe carrier-induced refractive index in quantum dot (QD) structures due to optical transitions from QD levels to continuum states is considered. It is shown that, for large photon energies, the refractive index change is given asymptotically by the Drude formula. Calculations of the linewidth enhancement factor, alpha, show that alphasimilar to1 due to this contribution to the total refractive index. Furthermore, for highly localized QD states, the absorption coefficient at the photon energies similar to0.8-1.0 eV due to these transitions can be on the order of 10(3) m(-1). (C) 2004 American Institute of Physics. (DOI: 10.1063/1.1639933)en
dc.description.sponsorshipScience Foundation Ireland; Russian Foundation for Basic Research (RFBR No. 01-02-17330);The International Association for the Promotion of Cooperation with Scientists from the Independent States of the Former Soviet Union (INTAS No. 2001-0571); Ministry of Education and Science of the Russian Federation (Russian Federal Program (No. A0155)); European Commission (EU IST project (DOTCOM)); Higher Education Authority (PRTLI Program)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationUskov, A. V., O’Reilly, E. P., McPeake, D., Ledentsov, N. N., Bimberg, D. and Huyet, G. (2004) 'Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states', Applied Physics Letters, 84(2), pp. 272-274. doi: 10.1063/1.1639933en
dc.identifier.doi10.1063/1.1639933
dc.identifier.endpage274
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued2
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage272
dc.identifier.urihttps://hdl.handle.net/10468/4401
dc.identifier.volume84
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.1639933
dc.rights© 2004 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Uskov, A. V., O’Reilly, E. P., McPeake, D., Ledentsov, N. N., Bimberg, D. and Huyet, G. (2004) 'Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states', Applied Physics Letters, 84(2), pp. 272-274 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.1639933en
dc.subjectLinewidth enhancement factoren
dc.subjectSemiconductor-laseren
dc.subjectFilamentationen
dc.subjectDependenceen
dc.subjectGainen
dc.subjectQuantum dotsen
dc.subjectRefractive indexen
dc.subjectPhotonsen
dc.subjectAbsorption coefficienten
dc.subjectLinewidthsen
dc.titleCarrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum statesen
dc.typeArticle (peer-reviewed)en
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