Barrier–channel intermixing and 2-dimensional electron gas degradation in Al-rich Al(Ga)N/AlGaN high electron mobility transistor heterostructures

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dc.contributor.authorPampili, Pietro
dc.contributor.authorZubialevich, Vitaly Z.
dc.contributor.authorMondal, Badal
dc.contributor.authorMukherjee, Jayjit
dc.contributor.authorSchulz, Stefan
dc.contributor.authorMoran, David A. J.
dc.contributor.authorParbrook, Peter J.
dc.contributor.funderResearch Ireland
dc.contributor.funderIrish Research eLibrary, IReL
dc.contributor.funderScience Foundation Ireland, SFI, 23/EPSRC/3888
dc.contributor.funderEngineering and Physical Sciences Research Council, SRC, 12/RC/2276_P2-EP/X036901/1-21/FFP-A/9014
dc.date.accessioned2026-07-14T09:50:02Z
dc.date.available2026-07-14T09:50:02Z
dc.date.issued2026-07-01
dc.description.abstractIn this work, we report on recent results in understanding and addressing the issue of interface smearing in high-aluminum content AlGaN/AlGaN heterostructures. On the one hand, the growth of high-crystal quality AlGaN by metal–organic vapor phase epitaxy requires the use of high temperatures, but, on the other hand, this may lead to alloy intermixing between barrier and channel layers, which smoothens out the polarization contrast and severely degrades or even completely destroys the 2-dimensional electron gas (2DEG). We show that x-ray diffraction analysis can be used as a nondestructive way to assess the sharpness of the interface, and that improved growth schemes can be successfully used to achieve high-quality 2DEG, as confirmed by contactless resistivity measurements. In particular, sheet resistivities around 2500 Ω / □ were demonstrated for AlN/Al 0.75Ga 0.25N, consistent with the best-reported values in the literature.en
dc.description.sponsorshipWe thank Dr. Paweł Michałowski from Łukasiewicz—Institute of Microelectronics and Photonics in Warsaw, Poland, for the high-resolution SIMS, and Dr. Donald MacLaren from the School of Physics, University of Glasgow, UK, for the cross-sectional TEM. This research is jointly supported by Taighde Éireann—Research Ireland, formerly Science Foundation Ireland (SFI) under Grant No. 23/EPSRC/3888 and by EPSRC under Grant No. EP/X036901/1. Part of this research was also supported by Research Ireland under the Grant Nos. 21/FFP-A/9014 and 12/RC/2276_P2. Open-access publication of this article was supported by the IReL consortium.
dc.description.versionPublished Version
dc.format.extent6
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid262108
dc.identifier.authororcidPampili, Pietro
dc.identifier.authororcidZubialevich, Vitaly Z.§0000-0003-4783-5104
dc.identifier.authororcidMondal, Badal§0000-0002-0522-1254
dc.identifier.authororcidMukherjee, Jayjit
dc.identifier.authororcidSchulz, Stefan§0000-0002-8178-8383
dc.identifier.authororcidMoran, David A. J.
dc.identifier.authororcidParbrook, Peter J.§0000-0003-3287-512X
dc.identifier.citationPampili, P, Zubialevich, V Z, Mondal, B, Mukherjee, J, Schulz, S, Moran, D A J & Parbrook, P J 2026, 'Barrier–channel intermixing and 2-dimensional electron gas degradation in Al-rich Al(Ga)N/AlGaN high electron mobility transistor heterostructures', Applied Physics Letters, vol. 128, no. 26, 262108, pp. 1-6. https://doi.org/10.1063/5.0325471
dc.identifier.doi10.1063/5.0325471
dc.identifier.endpage6
dc.identifier.issn0003-6951
dc.identifier.issued26
dc.identifier.journaltitleApplied Physics Letters
dc.identifier.othercrossref: 10.1063/5.0325471
dc.identifier.otherORCID: /0000-0002-0522-1254/work/220716637
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/19065
dc.identifier.volume128
dc.language.isoen
dc.publisherAmerican Institute of Physics
dc.relation.urihttps://www.scopus.com/pages/publications/105043980007
dc.rights© 2026, the Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license: https://creativecommons.org/licenses/by/4.0/
dc.rights.accessrightsopen access
dc.rights.licensenameAttribution 4.0 International
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/
dc.statusPeer reviewed
dc.subjectAlGaN/AlGaN heterostructures
dc.subject[EngineeringArchitecture]
dc.subject[Physics]
dc.subject[TyndallPhotonics]
dc.titleBarrier–channel intermixing and 2-dimensional electron gas degradation in Al-rich Al(Ga)N/AlGaN high electron mobility transistor heterostructuresen
dc.typeArticle (peer-reviewed)
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