Modeling and simulation of bulk gallium nitride power semiconductor devices

dc.contributor.authorSabui, G.
dc.contributor.authorParbrook, Peter J.
dc.contributor.authorArredondo-Arechavala, Miryam
dc.contributor.authorShen, Z. J.
dc.contributor.funderNational Science Foundationen
dc.date.accessioned2019-11-01T07:32:52Z
dc.date.available2019-11-01T07:32:52Z
dc.date.issued2016-05-03
dc.description.abstractBulk gallium nitride (GaN) power semiconductor devices are gaining significant interest in recent years, creating the need for technology computer aided design (TCAD) simulation to accurately model and optimize these devices. This paper comprehensively reviews and compares different GaN physical models and model parameters in the literature, and discusses the appropriate selection of these models and parameters for TCAD simulation. 2-D drift-diffusion semi-classical simulation is carried out for 2.6 kV and 3.7 kV bulk GaN vertical PN diodes. The simulated forward current-voltage and reverse breakdown characteristics are in good agreement with the measurement data even over a wide temperature rangeen
dc.description.sponsorshipU.S. National Science Foundation (Grant EECS-1407540)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid055006en
dc.identifier.citationSabui, G., Parbrook, P. J., Arredondo-Arechavala, M. and Shen, Z. J. (2016) 'Modeling and simulation of bulk gallium nitride power semiconductor devices', AIP Advances, 6(5), 055006. (15pp.) DOI: 10.1063/1.4948794en
dc.identifier.doi10.1063/1.4948794en
dc.identifier.eissn2158-3226
dc.identifier.endpage15en
dc.identifier.issued5en
dc.identifier.journaltitleAIP Advancesen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/8933
dc.identifier.volume6en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttps://aip.scitation.org/doi/10.1063/1.4948794
dc.rights©2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectElectronic engineering computingen
dc.subjectGallium compoundsen
dc.subjectIII-V semiconductorsen
dc.subjectPower semiconductor diodesen
dc.subjectSemiconductor device modelsen
dc.subjectTechnology CAD (electronics)en
dc.subjectWide band gap semiconductorsen
dc.titleModeling and simulation of bulk gallium nitride power semiconductor devicesen
dc.typeArticle (peer-reviewed)en
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